N-melilite | 54650-98-5

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 过渡金属有机体
• 英文名称: N-melilite
• 英文别名: melilite
• CAS: 54650-98-5
• 化学式: N₄O₃Si₃Y₂
• 分子量: 366.093
• InChiKey: BATOQOJQXRHSBP-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -6.19
• 重原子数：
  12.0
• 可旋转键数：
  0.0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  234.5
• 氢给体数：
  4.0
• 氢受体数：
  4.0

反应信息

• 作为产物：
  描述：

  yttrium(III) oxide 、 silicon nitride 以 neat (no solvent, solid phase) 为溶剂， 生成 N-melilite
  参考文献：
  名称：

  Phase Relations in Si-C-N-O-R (R = La,Gd,Y) Systems

  摘要：

  The present work determined the phase relations in the Si–C–N–O–R systems, involving SiC–Si3N4–R2O3, Si3N4–SiO2–R2O3, and SiC–Si3N4–SiO2–R2O3 (R = La,Gd,Y) systems by XRD phase analyses of the solid‐state reacted samples from powder mixtures of SiC, Si3N4, and R2O3. Subsolidus phase diagrams of these systems were presented and summarized. Within these systems in‐situ SiO2 impurity in the powder mixtures often cause the formation of some oxygen‐richer rare‐earth siliconoxynitrides, J‐, K‐, H‐phases and extends the ternary systems SiC–Si3N4–R2O3 into the quaternary systems SiC–Si3N4–SiO2–R2O3 (Si–C–N–O–R). In these systems, the reaction of partial SiC participation and the formation mechanism of rare‐earth siliconoxynitrides are discussed.

  DOI：

  10.1111/j.1551-2916.2011.04709.x

文献信息

• Corrosion of Structural Ceramics Under Subcritical Conditions in Aqueous Sodium Chloride Solution and in Deionized Water. Part I: Dissolution of Si3N4-Based Ceramics
  作者：Dagmar Galusková、Miroslav Hnatko、Dušan Galusek、Pavol Šajgalík

  DOI：10.1111/j.1551-2916.2011.04553.x

  日期：2011.9

  contact with an aqueous solution of sodium chloride (NaCl) at T≤290°C. Both studied ceramics dissolved by preferential attack of Si–N bonds in the matrix accompanied by the release of ammonia and formation of protective, mostly oxide layer of corrosion products at the surface. Increase of dissolution rate of sialon in aqueous NaCl solution at 290°C was observed in comparison to dissolution in deionized

  本文呈现的结果比较在添加氧化钇作为烧结添加剂来制备氮化硅的行为，以及在用氯化钠（NaCl）中在水溶液接触陶瓷塞隆的Ť ≤290℃。两者都研究了由于优先受到Si-N键在基体中的侵蚀而溶解的陶瓷，同时释放出氨并在表面形成了腐蚀保护层，主要是氧化产物。与去离子水中的溶解相比，在290°C下，赛隆在NaCl水溶液中的溶解速率增加，达到27 mmol·（m 2 ·h）-1。提出氯离子通过腐蚀产物的保护层的渗透有助于破坏钝化层和使易损材料表面重新暴露于腐蚀介质。
• High-resolution silicon-29 nuclear magnetic resonance in the Y-Si-O-N system
  作者：R. Dupree、M. H. Lewis、M. E. Smith

  DOI：10.1021/ja00212a014

  日期：1988.2

  The isotropic /sup 29/Si chemical shifts for the complete range of mixed tetrahedral coordinations SiO/sub x/N/sub 4-x/(0 less than or equal to x less than or equal to 4) have been obtained by using the crystalline phases of the Y-Si-O-N system. Although some overlap of the chemical shift ranges from different tetrahedral units occurs, it is normally possible to differentiate distinct environments

  已通过使用以下公式获得了混合四面体配位 SiO/sub x/N/sub 4-x/（0 小于或等于 x 小于或等于 4）的完整范围的各向同性 /sup 29/Si 化学位移Y-Si-ON 系统的结晶相。尽管不同四面体单元的化学位移范围会出现一些重叠，但通常可以区分不同的环境，从而可以改进结构数据并提供有关氮氧化物系统中相演变的信息。例如，已通过使用这些位移范围确定了 N-melilite (Y/sub 2/Si/sub 3/O/sub 3/N/sub 4/) 最可能的原子排列。
• Gauckler, L. J.; Hohnke, H.; Tien, T. Y., Journal of the American Ceramic Society, 1980, vol. 63, p. 35 - 37
  作者：Gauckler, L. J.、Hohnke, H.、Tien, T. Y.

  DOI：——

  日期：——
• Correlated N/O anion orders in melilite phosphors
  作者：Paula Kayser、Hannah E. Johnston、Mu- Hai Fang、David A. Keen、Ru Shi Liu、J. Paul Attfield

  DOI：10.1016/j.jssc.2020.121198

  日期：2020.4

  The N/O anion distributions in the melilite-type phosphor host material Y2Si3O3N4 and a Ce-doped sample Y1.5Ce0.5Si3O3N4 have been determined from powder neutron diffraction. Both materials have a highly ordered N/O distribution that is not changed significantly by the disorder introduced by Ce doping. This distribution evidences the presence of SiN3O and SiN2O2 tetrahedra and although these are not fully long range-ordered, local structural correlations follow simple connectivity rules that lead to an estimated residual molar entropy of R ln3. A broad range of N/O environments is found around 8-coordinate Y(Ce) sites which is expected to broaden their spectroscopic features.
• Characterization and Luminescence Properties of Y₂Si₃O₃N₄:Ce³⁺Phosphor for White Light-Emitting-Diode
  作者：Y. Y. Ma、F. Xiao、S. Ye、Q. Y. Zhang

  DOI：10.1149/2.006204jes

  日期：——

  Single-phased Y-2-xSi(3)O(3)N(4):xCe(3+) (0 < x <= 0.4) phosphors were prepared by solid-state reaction method in flowing hydrogen and nitrogen mixture gas. The X-ray diffraction analysis indicated that Ce3+ ions had been incorporated into the host lattice of Y2Si3O3N4, and the optimized doping concentration was 3 mol%. Strong absorption peaking at about 397 nm was observed on the excitation spectra for the Ce3+-doped phosphors, which matched well with the current near-ultraviolet (NUV) InGaN/GaN light emitting diodes (LEDs). The Y2-xCexSi3O3N4 samples showed a broad emission band with peak wavelength ranging from 465 to 500 nm, which was attributed to the 5d-4f transition of Ce3+. Energy transfer between Ce3+ ions was discussed and evidenced in detail, which resulted in redshift of the emission and concentration quenching. To understand the thermal quenching behavior, the temperature-dependent luminescence of Y1.94Ce0.06Si3O3N4 was investigated. Bluish-green LEDs was fabricated by integrating a near-ultraviolet (NUV) chip with Y1.94Si3O3N4:0.06Ce(3+) phosphor as a single package. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.006204jes] All rights reserved.