vanadium sulfide

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 过渡金属有机体
• 英文名称: vanadium sulfide
• 英文别名: Sulfane;vanadium
• 化学式: SV
• 分子量: 83.0075
• InChiKey: RFKMUOUCESLAPG-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.11
• 重原子数：
  2
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  1
• 氢给体数：
  1
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  iron(III) oxide 、 vanadium sulfide 以 neat (no solvent) 为溶剂， 生成
  参考文献：
  名称：

  Loseva, G. V.; Mukoed, G. M.; Ryabinkina, L. I., Physica status solidi. A, Applied research

  摘要：

  DOI：
• 作为产物：
  描述：

  以 neat (no solvent) 为溶剂， 生成 vanadium sulfide
  参考文献：
  名称：

  Lattice-Matched Transition Metal Disulfide Intergrowths: The Metallic Conductors Ag₂Te(MS₂)₃ (M = V, Nb)

  摘要：

  We present new chalcogenide compounds, Ag2Te(MS2)(3) (M = V, Nb), built up of alternating planes of [MS2] and [Ag2Te]. The Ag and Te atoms are linearly coordinated by S atoms in the [MS2] layers and held in place by covalent interactions. Structural polymorphism was found by single crystal X-ray diffraction studies, where long-range ordering or disorder of the Ag and Te atoms within the hexagonal planar [Ag2Te] layer yielded two distinct crystal forms. When the Ag and Te atoms are ordered, the two isostructural compounds crystallize in the non-centrosymmetric P (6) over bar 2m space group, with a = 5.5347(8) angstrom, c = 8.0248(16) angstrom, and V = 212 89(6) angstrom(3) for alpha-Ag2Te(VS2)(3) and a = 5.7195(8) angstrom, c = 8.2230(16) angstrom, and V = 232.96(6) angstrom(3) for alpha-Ag2Te(NbS2)(3). For the occupationally disordered Ag/Te arrangement, a subcell of the ordered phase that crystallizes in the non-centrosymmetric P (6) over bar m2 space group, with a = 31956(6) angstrom (=a(a)/(3)(1/2)), c = 8.220(2) angstrom, and V = 77.31(3) angstrom(3) for beta-Ag2Te(VS2)(3), was identified. Furthermore, pair distribution function analysis revealed local distortions in the [Ag2Te] layer. Band structure calculations at the density functional theory level were carried out to investigate the electronic structure of Ag2Te(MS2)(3). Electronic transport measurements on Ag2Te(MS2)(3) show that they exhibit p-type metallic behavior. Thermal analyses and temperature-dependent powder X-ray diffraction studies were focused on the stability and transformation/decomposition of the Ag2Te(MS2)(3) phases. Magnetic susceptibility data are also reported. The new intercalated Ag2Te(MS2)(3) system features a unique hypervalent Te with a three-center, four-electron bonding environment isoelectronic to that found in I-3(-).

  DOI：

  10.1021/ic400483d

文献信息

• Gas-phase reactions of iron(1-) and cobalt(1-) with simple thiols, sulfides, and disulfides by Fourier-transform mass spectrometry
  作者：L. Sallans、K. R. Lane、B. S. Freiser

  DOI：10.1021/ja00185a013

  日期：1989.2

  products, H-Fesup minus}}-SH and Fesup minus}}-SH. Some of the thermochemical data derived from this study include Ddegree}(Msup minus}}-S) > 103 kcal/mol and Ddegree}(Msup minus}}-SH) = 83 plus minus}9 kcal/mol. Finally, a brief survey of the reactivity of Vsup minus}}, Crsup minus}}, and Mosup minus}} with selected organosulfur compounds is also reported. 79 refs., 3 figs., 7 tabs

  发现 Fesup minus}} 和 Cosup minus}} 会与简单的硫醇、硫化物和二硫化物反应。由这些金属阴离子 Msup minus}} 和硫醇形成的主要反应产物包括 MSsup minus}}、MSHsup minus}} 和 MSHsub 2}sup minus}} 和提出了一种涉及金属初始插入弱 CS 键的机制。类似地，CS 插入是与硫化物和二硫化物反应的主要攻击模式，类似于观察到的金属阳离子反应。碰撞诱导解离用于支持主要产物 H-Fesup minus}}-SH 和 Fesup minus}}-SH 的拟议结构。本研究得出的一些热化学数据包括 Ddegree}(Msup minus}}-S) > 103 kcal/mol 和 Ddegree}(Msup minus}}-SH) = 83 plus减去}9 kcal/mol。最后，还报告了
• Existence of Gaseous Sulphides of the Transition Elements : Dissociation Energy of Gaseous MnS
  作者：R. COLIN、P. GOLDFINGER、M. JEUNEHOMME

  DOI：10.1038/194282a0

  日期：1962.4

  IT is of interest to obtain data on the lattice energy, ΔH00[at.], of solids, and dissociation energies, D00, of gaseous molecules of whole groups of compounds, such as homonuclear molecules1, oxides2, sulphides2, etc., and to study the variation of these properties, or the ratio of these magnitudes, ΔH00[at.]/D00 = α, as a function of the electronic structure of the constituting atoms. An interesting

  获得固体的晶格能 ΔH00[at.] 和整组化合物的气态分子的离解能 D00 的数据很有意义，例如同核分子 1、氧化物 2、硫化物 2 等，并研究这些特性的变化，或这些量级的比率，ΔH00[at.]/D00 = α，作为构成原子的电子结构的函数。一个有趣的例子是过渡元素的硫化物。
• The standard molar enthalpy of formation at 298.15 K of VS1.043 by combustion calorimetry in fluorine
  作者：Brett M Lewis、P.A.G O'Hare、Pannee Mukdeeprom、Jimmie G Edwards

  DOI：10.1016/0021-9614(87)90009-7

  日期：1987.12

  Abstract The standard molar enthalpy of formation Δ f H m o of VS 1.043 has been determined by fluorine-combustion calorimetry. The result obtained, −(230.3±2.2) kJ·mol −1 at 298.15 K and p o = 101.325 kPa, differs significantly from values deduced from high-temperature studies.

  摘要 VS 1.043 的标准摩尔生成焓Δ f H mo 已通过氟燃烧量热法测定。获得的结果，-(230.3±2.2) kJ·mol -1 在 298.15 K 和 po = 101.325 kPa，与从高温研究推导出的值显着不同。
• Propriétés magnétiques et électriques de thiospinelles quaternaires
  作者：J. Padiou、D. Bideau、J.P. Troadec

  DOI：10.1016/0022-4596(80)90105-x

  日期：1980.3

  Quaternary thiospinels CuBB′S4 (B = Ti, V, Cr, Co; B′ = Ti, Zr, Sn) containing monovalent copper in tetrahedral sites, have been prepared. The magnetic and electrical studies reveal two types of compounds: the former of formula CuB3+B′4+S4 exhibit a semiconducting and paramagnetic behavior, the latter of formula CuB4+B′4+S4 are metallic conducting and temperature-independent paramagnetic. The semiconductor

  制备了在四面体位点含有一价铜的季硫代仲铜Cu BB 'S 4（B = Ti，V，Cr，Co；B '= Ti，Zr，Sn）。磁和电的研究揭示两种类型的化合物：前者式幼童3+乙' 4+ š 4表现出半导电和顺磁性行为，后者式幼童4+乙' 4+小号4是金属的导电和温度独立的顺磁性。半导体和顺磁性的硫代松油CuCo 0.5 Sn 1.5 S 4包含Co 2+和Sn 4+。
• Stable Sulfuric Vapor Transport and Liquid Sulfur Growth on Transition Metal Dichalcogenides
  作者：Dmitriy A. Chareev、Md Ezaz Hasan Khan、Debjani Karmakar、Aleksey N. Nekrasov、Maximilian S. Nickolsky、Olle Eriksson、Anna Delin、Alexander N. Vasiliev、Mahmoud Abdel-Hafiez

  DOI：10.1021/acs.cgd.2c01318

  日期：——

  Transition metal dichalcogenides (TMDs) are an emergent class of low-dimensional materials with growing applications in the field of nanoelectronics. However, efficient methods for synthesizing large monocrystals of these systems are still lacking. Here, we describe an efficient synthetic route for a large number of TMDs that were obtained in quartz glass ampoules by sulfuric vapor transport and liquid

  过渡金属二硫化物 (TMD) 是一类新兴的低维材料，在纳米电子学领域的应用越来越广泛。然而，仍然缺乏合成这些系统的大单晶的有效方法。在这里，我们描述了通过硫酸蒸汽传输和液态硫在石英玻璃安瓿中获得的大量 TMD 的有效合成路线。与升华技术不同，金属以分子形式进入气相，因此含有比生长晶体更多的硫。我们研究了这些晶体的物理特性，并将它们与文献中报道的最新发现进行了比较。2、ReS 2、NbS 2和TaS 2。这种合成高质量 TMD 单晶的新方法可以缓解许多材料质量问题，适用于新兴电子设备。