Kinetics and mechanism of the gas phase thermal decomposition of hexachlorodisilane in the presence of iodine
作者:Alan M. Doncaster、Robin Walsh
DOI:10.1039/f19807600272
日期:——
The gas phase thermal reaction of Si2Cl6 with I2 has been investigated. Product analysisreveals the formation of SiCl4 and SiCl2I2. The reaction rate was found to obey the rate equation –d[I2]//dt=k[Si2Cl6] and values of k were insensitive to changes in surface-to-volume ratio. This evidence suggests the following two step mechanism Si2Cl6→ SiCl2+ SiCl4 slow (1), SiCl2+ I2→ SiCl2I2 fast. (2) From rate
已经研究了Si 2 Cl 6与I 2的气相热反应。产物分析揭示了SiCl 4和SiCl 2 I 2的形成。发现反应速率服从速率方程式–d [I 2 ] // d t=k [Si 2 Cl 6 ],k的值对表面体积比的变化不敏感。该证据表明以下两步机理为Si 2 Cl 6 →SiCl 2 + SiCl 4慢(1),SiCl 2 + I 2 →SiCl 2 I 2快。(2)根据在596–655 K温度范围内的速率测量得出的Arrhenius方程。log(k 1 / s –1)=(13.49±0.12)–(205.9±1.4 kJ mol –1)/ R T获得ln 10。这些数字与在没有清除剂的情况下对该反应的早期流动研究一致。已对其他清除剂的作用进行了简要调查。