gallium-nickel powder | 12183-34-5

• 英文名称: gallium-nickel powder
• 英文别名: gallium-nickel；nickel-gallium；Gallium--nickel (1/1)；gallane;nickel
• CAS: 12183-34-5
• 化学式: GaNi
• 分子量: 128.413
• InChiKey: UQILVJIDOACWIF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -1.19
• 重原子数：
  2
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为产物：
  描述：

  galium(III) nitrate monohydrate 、 nickel(II) nitrate hexahydrate 在 magnesium(II) nitrate hexahydrate 、 sodium carbonate 、 sodium hydroxide 、 氢气 作用下， 以 水 为溶剂， 反应 29.0h， 生成 gallium-nickel powder
  参考文献：
  名称：

  苯乙炔半加氢过程中的镍镓金属间纳米晶体催化剂

  摘要：

  炔的化学选择性加氢在化学工业中非常重要，在金属化学中，金属间化合物（IMC）作为有效的催化剂引起了广泛的兴趣。在本文中，我们演示了通过方便地原位还原层状双氢氧化物（LDH）前体制备几种负载的Ni-Ga IMC（Ni 3 Ga，Ni 5 Ga 3和NiGa）的方法，这些方法证明了催化活性和选择性的显着提高。苯乙炔选择性氢化为苯乙烯。Ni-Ga IMC的组成和粒径可以通过在LDHs的全序转化过程中调节Ni / Ga的比例或还原温度来调节，并且可以在Ni 3上获得最佳的催化性能。Ga IMC的苯乙烯产率为87.7％（在40°C和0.3 MPa时，粒径为7.2 nm），优于大多数报道的Ni催化剂。X射线吸收精细结构表征和DFT计算揭示了Ni-Ga IMC中Ga从电子转移到Ni以及Ga进行的活性位点隔离，这说明了出色的氢化选择性。Ni-Ga IMC催化剂的显着改善的催化性能使其成为炔烃选择性加氢的有希望的候选者。

  DOI：

  10.1002/cctc.201300813

文献信息

• Relationship between the Synthesis Conditions and the Structural, Electrical, Magnetic, and Hydrogen Absorption Properties of the Ternary Compounds GdNi3X2 with X=Al, Ga, or Sn
  作者：S. Pechev、J.-L. Bobet、B. Chevalier、B. Darriet、F. Weill

  DOI：10.1006/jssc.1999.8548

  日期：2000.2

  CaCu5-type, whereas the HoNi2.6Ga2.4-type is observed for the A2-sample. The structural properties of GdNi3Al2 (M- and A1-samples) are more complicated; the electron diffraction patterns suggest the occurrence of a new superstructure of the hexagonal CaCu5-type. The study of the electrical and magnetic properties of these compounds shows that GdNi3Ga2 is ferromagnetic (TC=18.0(5) K), GdNi3Sn2 orders

  通过熔融（M样品）并随后在1273 K（A1样品）或1073 K（A2样品）中退火获得的三元化合物GdNi 3 X 2（X = Al，Ga或Sn）的晶体结构已经确定。借助X射线粉末衍射和透射电子显微镜进行了研究。GdNi 3 Sn 2在所有温度下均以六方晶系的HoNi 2.6 Ga 2.4型结晶。GdNi 3 Ga 2有两种：高温形式（M样品）采用六角形CaCu 5型，而HoNi 2.6 Ga 2.4对于A2-样品观察到-型。GdNi 3 Al 2（M-和A1样品）的结构特性更为复杂。电子衍射图表明出现了六方CaCu 5型的新的上部结构。对这些化合物的电磁性能的研究表明，GdNi 3 Ga 2具有铁磁性（T C = 18.0（5）K），GdNi 3 Sn 2反铁磁性（T N = 19.5（5）K）和GdNi 3 Al 2（M-或A1样品）表现出铁磁行为（T C= 20.0（5）K）。而且，
• Surface plasmons in NiGa and CoGa alloys
  作者：J.A Leiro、M.H Heinonen

  DOI：10.1016/0039-6028(95)00916-7

  日期：1996.2

  Electron energy losses at the surface of Ga, NiGa and CoGa have been studied by X-ray photoemission spectroscopy (XPS). These features are interpreted as being due to surface plasmons. For Ga metal the experimental result is in good agreement with the surface plasmon energy obtained by a free-electron model. At the surface of CoGa and NiGa alloys, the corresponding energy is about 1 eV higher than

  已经通过 X 射线光电子能谱 (XPS) 研究了 Ga、NiGa 和 CoGa 表面的电子能量损失。这些特征被解释为由于表面等离子体。对于 Ga 金属，实验结果与由自由电子模型获得的表面等离子体能量非常吻合。在 CoGa 和 NiGa 合金表面，相应的能量比纯 Ga 金属高约 1 eV。这个结果也在自由电子模型的框架中进行了讨论。
• Micke; Markovski; Ipser, Berichte der Bunsengesellschaft/Physical Chemistry Chemical Physics, 1998, vol. 102, # 9, p. 1240 - 1244
  作者：Micke、Markovski、Ipser、Van Loo

  DOI：——

  日期：——
• Synthesis and crystal structures of the new metal-rich ternary borides Ni12AlB8, Ni12GaB8 and Ni10.6Ga0.4B6—examples for the first B5 zig-zag chain fragment
  作者：Martin Ade、Dominik Kotzott、Harald Hillebrecht

  DOI：10.1016/j.jssc.2010.05.009

  日期：2010.8

  Single crystals of the new borides Ni12AlB8, and Ni10.6Ga0.4B6 were synthesized from the elements and characterized by XRD and EDXS measurements. The crystal structures were refined on the basis of single crystal data. Ni12AlB8 (oC252, Cmce, a=10.527(2), b=14.527(2), c=14.554(2) angstrom, Z=12, 1350 reflections, 127 parameters, R-1(F)=0.0284, wR(2)(F-2)=0.0590) represents a new structure type with isolated B atoms and B-5 fragments of a B-B zig-zag chain. Because the pseudotetragonal metric crystals are usually twinned. Ni10.6Ga0.4B6 (oP68, Pnma, a=12.305(2), b=2.9488(6), c=16.914(3) angstrom, Z=4, 1386 reflections, 86 parameters, R-1(F)=0.0394, wR(2)(F-2)=0.104) is closely related to binary Ni borides. The structure contains B-B zig-zag chains and isolated B atoms. Ni12GaB8 is isotypical to the Al-compound (a=10.569(4), b=14.527(4) and c=14.557(5) angstrom). (C) 2010 Elsevier Inc. All rights reserved.
• Single crystal studies on boron-rich τ-borides Ni23−xMxB6 (M=Zn, Ga, In, Sn, Ir)—The surprising occurrence of B4-tetraheda as a normal case?
  作者：Dominik Kotzott、Martin Ade、Harald Hillebrecht

  DOI：10.1016/j.jssc.2010.07.048

  日期：2010.10

  Single crystals of the cubic tau-borides Ni23-xMxB6 (M=Zn, Ga, In, Sn, Ir) were synthesised from the elements at temperatures between 1200 and 1500 degrees C. The structure refinements show that the existence of boron-rich phases is quite common. Starting from the idealised composition Ni20M3'B-6 a part of the metal atoms on site 8c is substituted by B-4 tetrahedra. For M'=Ga a complete exchange seems to be possible leading to the composition Ni20GaB14. For M'=Zn and Sn the formation of solid solutions is less extended. For M'=In no exchange is observed but an unusual pattern of Ni/In distribution is observed. With M=Ir mixed occupations occur for all sites and the boron content varies, too. All compositions were confirmed by EDX measurements. (C) 2010 Elsevier Inc. All rights reserved.