Cl<i><sub>n</sub></i>H<sub>6-</sub><i><sub>n</sub></i>SiGe Compounds for CMOS Compatible Semiconductor Applications: Synthesis and Fundamental Studies
作者:Jesse B. Tice、Andrew V. G. Chizmeshya、Radek Roucka、John Tolle、Brian R. Cherry、John Kouvetakis
DOI:10.1021/ja0713680
日期:2007.6.1
derivatives such as Cl2SiHGeH2Cl (3), Cl2SiHGeHCl2 (4), ClSiH2GeH2Cl (5), and ClSiH2GeHCl2 (6) have also been produced for the first time leading to a newclass of highlyreactive Si-Ge compounds that are of fundamental and practical interest. Compounds 1-6 are characterized by physical and spectroscopic methods including NMR, FTIR, and mass spectroscopy. The results combined with first principles density