tetraethylammonium tetrabromogallate | 33896-84-3

• 英文名称: tetraethylammonium tetrabromogallate
• 英文别名: Et4N*GaBr4；[N(ethyl)4][GaBr4]
• CAS: 33896-84-3
• 化学式: Br₄Ga*C₈H₂₀N
• 分子量: 519.592
• InChiKey: CYVSTOZGCOZXPM-UHFFFAOYSA-J

计算性质

• 辛醇/水分配系数(LogP)：
  None
• 重原子数：
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• 可旋转键数：
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• 环数：
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• sp3杂化的碳原子比例：
  None
• 拓扑面积：
  None
• 氢给体数：
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• 氢受体数：
  None

反应信息

• 作为反应物：
  描述：

  tetraethylammonium tetrabromogallate 、 Bis(ethylenedithio)tetraselenafulvalene 以 乙醇 、 氯苯 为溶剂， 生成 [GaBr4][(C5H4S2Se2)2]2, κ, orthorhombic
  参考文献：
  名称：

  有机导体中反铁磁序和超导的共存

  摘要：

  摘要我们最近发现各种具有新颖的电和磁特性的磁性有机导体，其中磁性和电导率之间的相互作用起着至关重要的作用。（BETS）2 FeX 4 [BETS =双（亚乙基二硫代）四硒富勒烯中]主要有两种类型的晶体修饰（λ和κ）。在三斜变体λ-（BETS）2 FeCl 4中，BETS层中的传导电子与FeCl 4-阴离子上的自旋相互作用，从而产生反铁磁绝缘的基态。但是系统在高压下变成了超导体。另外，已经发现λ-（BETS）2 Fe x Ga 1-x Cl 4（0.35 x 2 FeBr 4）是第一反铁磁有机超导体（TN = 2.4 K，T c = 1.1 K）。比热测量结果显示了低于T c的磁序和超导性并存的证据。低于TN的反铁磁性金属相的易轴与a轴平行，并且磁化强度的场相关性在2 T附近显示出亚磁行为。最近，我们发现同构λ-（BETS）2 FeCl 4经历了相似的磁化和磁化。较低温度下的超导转变。

  DOI：

  10.1016/s0277-5387(01)00658-1

文献信息

• Chemical Control of Electrical Properties and Phase Diagram of a Series of λ-Type BETS Superconductors, λ-(BETS)₂GaBr<i>_x</i>Cl_4-<i>_x</i>
  作者：Hisashi Tanaka、Akiko Kobayashi、Akane Sato、Hiroki Akutsu、Hayao Kobayashi

  DOI：10.1021/ja9827806

  日期：1999.2.1

  lambda-(BETS)(2)GaBrxCl4-(x) [BETS = bis(ethylenedithio)tetraselenafulvalene; 0 less than or equal to x less than or equal to 2] is a molecular superconductor with strongly correlated conduction electrons. The electrical transport properties of lambda(BETS)(2)GaBrx- Cl4-x are drastically changed by varying the bromine content x or by applying pressure. At ambient pressure, the superconducting transition could be observed for x < 0.75. The pressure and x dependencies of T-c were examined. The M-H curve (M = magnetization; H = magnetic field) at 2 K indicated the almost perfect Meissner state of the superconducting phase of lambda-(BETS)(2)CaCl4. The H-cl is similar to 8 Oe for H-perpendicular to and 12 Oe for H-parallel to where H-perpendicular to and H-parallel to are the magnetic fields perpendicular and parallel to the c axis, respectively. The magnetic susceptibility of lambda-(BETS)(2)GaBrxCl4-x increases with decreasing temperature to similar to 60 K, below which the susceptibility becomes x-dependent and tends to be suppressed with increasing x. The isotropic decrease of the static susceptibility at lower temperature observed in the insulating system with x > 1.0 indicates the insulating ground state seems not to be antiferromagnetic but probably nonmagnetic. The crystal structure determinations of a series of lambda-(BETS)(2)GaBrxCl4-x and the calculations of the intermolecular overlap integrals of the highest occupied molecular orbital of BETS were made to elucidate a key factor of the superconducting transition mechanism. The x-dependence of intermolecular overlap integrals seems to suggest that the magnitude of the "spin gap" of the nonmagnetic insulating state tends to be diminished with decreasing x. There exists one intermolecular overlap integral exhibiting a large temperature and x-dependence, which seems to play a crucial role in determining the nature of the ground state.
• Magnetoresistance Effects Evidencing the π−d Interaction in Metallic Organic Conductors, (EDT-DSDTFVO)₂•MX₄ (M = Fe, Ga; X = Cl, Br)
  作者：Hideki Fujiwara、Toshiki Hayashi、Toyonari Sugimoto、Hiroyuki Nakazumi、Satoru Noguchi、Lin Li、Keiichi Yokogawa、Syuma Yasuzuka、Keizo Murata、Takehiko Mori

  DOI：10.1021/ic060034t

  日期：2006.7.1

  The 2:1 salts of a new donor molecule, EDT-DSDTFVO with MX4- (M = Fe, Ga; X = Cl, Br) ions, were prepared. The crystal structures of the donor molecules had a beta-type packing motif. All the salts essentially exhibited metallic behaviors despite the small upturns in the resistances below 30-70 K. A large negative magnetoresistance (MR) effect [-14.7% (rho(perpendicular)) at 4.0 K and 5 T] was observed in the FeCl4- salt, while a positive MR effect [+4.0% (rho(perpendicular)) at 4.0 K and 5 T] was observed in the GaCl4- salt, suggesting that there is a pi-d interaction in the FeCl4- salt. The pressure application suppressed the resistivity upturns, increased the negative MR effect (-17.7% at 9.5 kbar) in the FeCl4- salt, and decreased the positive MR effect (+3.3% at 15 kbar) in the GaCl4- salt.
• Electrical Conducting and Magnetic Properties of (Ethylenedithiotetrathiafulvalenothioquinone-1,3-diselenolemethide)₂·FeBr₄ (GaBr₄) Crystals with Two Different Interlayer Arrangements of Donor Molecules
  作者：Takuya Matsumoto、Yohsuke Kamada、Toyonari Sugimoto、Toshiji Tada、Satoru Noguchi、Hiroyuki Nakazumi、Motoo Shiro、Harukazu Yoshino、Keizo Murata

  DOI：10.1021/ic030083v

  日期：2003.8.1

  Two donor molecules newly synthesized, dimethylthio- and ethylenedithio-tetrathiafulvalenothioquinone-1,3-diselenolemethides (1 and 2), were used to prepare their charge-transfer (CT) salts with a magnetic FeBr4- counteranion. For 1, a low electrical conducting 1:1 salt (1(.)FeBr(4)) was obtained, in which molecules of 1 are tightly dimerized in a one-dimensional (1D) stacking column. On the other hand, 2 gave a 2:1 salt (2(2)(.)FeBr(4)) as two different kinds of plate crystals (I and 11). Both I and II possess similar stacking structures of molecules of 2 in each 1D column with a half-cut pipelike structure along the c axis. However, for I, the stacking columns are aligned in the same direction along the a and b axes, while for II they are in the same direction along the a axis, but in the reverse direction along the b axis, resulting in the difference in the relative arrangement of molecules of 2 and FeBr4- ions between the two crystals. The room-temperature electrical conductivities of the single crystals of I and II were 13.6 and 12.7 S cm(-1), respectively. The electrical conducting behavior in I was metallic above 170 K but changed to be semiconducting with a very small activation energy of 7.0 meV in the temperature range 4-170 K. In contrast, II showed the semiconducting behavior in the whole temperature range 77-285 K. The corresponding nonmagnetic GaBr4- salts with almost the same crystal structure as I and II showed definitively different electrical conducting properties in the metal to semiconductor transition temperature in I as well as in the magnitude of activation energy in the semiconducting region of I and II. The interaction between the d spins of FeBr4- ions was weak and antiferromagnetic in both I and II, but the magnitude of the spin interaction was unexpectedly larger compared with that in the FeBr4- salt of the corresponding sulfur derivative of 2 with closer contact between the neighboring FeBr4- ions. These electrical conducting and magnetic results suggest a significant interaction between the conducting pi electrons and the d spins of FeBr4- ions located near the columns or layers.