dimethylzinc triethylamine | 36951-67-4

• 英文名称: dimethylzinc triethylamine
• 英文别名: dimethyl zinc:triethylammine adduct
• CAS: 36951-67-4
• 化学式: C₂H₆Zn*C₆H₁₅N
• 分子量: 196.651
• InChiKey: LYMIBPFVNGXXHA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  None
• 重原子数：
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• 可旋转键数：
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• 环数：
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• sp3杂化的碳原子比例：
  None
• 拓扑面积：
  None
• 氢给体数：
  None
• 氢受体数：
  None

反应信息

• 作为反应物：
  描述：

  selenium 、 dimethylzinc triethylamine 以 gas 为溶剂， 生成 zinc(II) selenide
  参考文献：
  名称：

  气相生长的 ZnSe 纳米粒子的表征

  摘要：

  在室温和 120 Torr 下操作的对流反应器中，通过在 H2 中稀释的 (CH3)2Zn:N(C2H5)3 和 H2Se 的蒸气反应来合成 ZnSe 纳米颗粒。将颗粒作为随机聚集体收集在硅基材上，并放置在反应区下游的透射电子显微镜 (TEM) 网格上。使用 TEM 和电子衍射的粒子表征揭示了直径约 40 nm 的多晶纳米粒子的存在，这些纳米粒子显然是由具有约 4 nm 特征尺寸的较小纳米晶体凝结形成的。纳米颗粒的拉曼光谱揭示了与 ZnSe 的 LO 声子相关的不对称加宽特征，表明存在较小的单晶晶粒。

  DOI：

  10.1063/1.1481769

文献信息

• Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness
  作者：A. Zubiaga、F. Tuomisto、F. Plazaola、K. Saarinen、J. A. Garcia、J. F. Rommeluere、J. Zuñiga-Pérez、V. Muñoz-Sanjosé

  DOI：10.1063/1.1855412

  日期：2005.1.24

  Positron annihilation spectroscopy has been used to study the vacancy-type defects produced in films grown by metalorganic chemical vapor deposition on different sapphire orientations. Zn vacancies are the defects controlling the positron annihilation spectra at room temperature. Close to the interface (<500nm) their concentration depends on the surface plane of sapphire over which the ZnO film has been grown. The Zn vacancy content in the film decreases with thickness, and above 1μm it is independent of the substrate orientation.
• Optical properties of MOVPE-grown ZnS epilayers on (100) GaAs
  作者：M. Fernández、P. Prete、N. Lovergine、A. M. Mancini、R. Cingolani、L. Vasanelli、M. R. Perrone

  DOI：10.1103/physrevb.55.7660

  日期：——

  Excitonic properties of high-quality ZnS layers grown by low-pressure metal-organic vapor-phase epitaxy have been investigated using photoluminescence and absorption spectroscopy. Comparison with theoretical models has provided accurate information on eigenstates, broadening, strain, and temperature dependence of heavy-hole, light-hole, and split-off-band exciton transitions. Finally, radiative recombination due to inelastic exciton-polariton scattering is shown under strong injection rates.