(TG). These complexes decompose by phosphite elimination, decarboxylation and dealkylation. Hot-wall Chemical Vapour Deposition (CVD) experiments were carried out at 380 °C using 11c as precursor for the deposition of copper onto pieces of TiN-coated oxidized silicon substrates. Copper layers of high purity were obtained with grain sizes between 200–1200 nm.
金属有机物[((RO)3 P)m CuO 2 CCF 3 ](R = CH 3:11a,m = 1; 11b,m = 2; 11c,m =3。R = CH 2 CH 3:12a,m= 1;12b,m= 2;12c,m= 3。R = CH 2 CF 3:13a,m= 1;13b,m= 2;13c,m = 3)可以通过[((RO)3 P)m
氯化
铜](R = CH 3:5a,m = 1; 5b,m = 2; 5c,m =3。R = CH 2 CH 3:6a,m = 1; 6b,m = 2; 6c,m = 3) [KO 2 CCF 3 ](7)或[
铜2 O](8)与HO 2 CCF 3(9)和P(或)3(2,R = CH 3;3,R = CH 2 CH 3;4,R = CH 2 CF 3)。31 P 1 H}已在25和-80°C下研究了NMR光谱[[((CH 3 O)3 P)m CuO 2 CCF