氢插入化合物H x VO 2(金红石)(0 < x <0.37)是在环境温度下通过化学方法,氢溢出和电化学方法制备的,随后通过粉末X射线衍射和化学分析进行表征。对于H x HO 2(0.16 < x <0.37),发生单斜晶母氧化物的变形,从而得到正交晶状体金红石相关结构,其晶格参数类似于高压形成的VO 2- x(OH)x的晶格参数,高温钒酸铵的高温分解,先前已有报道。H 0.3 VO 2的振动光谱已经使用非弹性中子散射光谱法进行了测量。光谱和相应的振动分析进一步证实,氢插入化合物可以配制成羟基氧化物。
The Role of Ionic Liquid Breakdown in the Electrochemical Metallization of VO<sub>2</sub>: An NMR Study of Gating Mechanisms and VO<sub>2</sub> Reduction
作者:Michael A. Hope、Kent J. Griffith、Bin Cui、Fang Gao、Siân E. Dutton、Stuart S. P. Parkin、Clare P. Grey
DOI:10.1021/jacs.8b09513
日期:2018.12.5
electrochemical metallization of bulk VO2 particles is shown to be associated with intercalation of hydrogen, the degree of which can be measured with quantitative 1HNMR spectroscopy. Possible sources of the hydrogen are explored, and by using a selectively deuterated ionic liquid, it is revealed that the hydrogenation is due to deprotonation of the ionic liquid; specifically, for the commonly used dialkylimidazolium-based
of V (3+) cations, and thus leading to self-doping. Experimental and simulated electron energy-loss spectroscopy data confirm both the presence of V (4+) and the validity of the density-of-states calculation. Temperature-dependent magnetic susceptibility measurements indicate strongly frustrated antiferromagnetic interactions between the vanadium ions. A model involving the charge order of the V (3+)
涉及氯氧化钒与苯甲醇反应的非水液相路线导致形成具有椭圆形形态的单晶半导体 VO 1.52(OH) 0.77 纳米棒,长度可达 500 nm,通常直径约为 100 nm . 通过中子和同步加速器粉末 X 射线衍射以及不同的电子显微镜技术(SEM、(HR)TEM、EDX 和 SAED)对成分、结构和形态进行了彻底分析。获得的数据指向了一种荷兰石型结构,与其他钒酸盐不同,它在沿 c 轴的通道中包含氧化物离子,氢原子连接到共享边缘的氧原子上,形成 OH 基团。根据结构探针和磁测量(1.94 μ B/V),钒的形式化价为 +3。81 (V (4+)/V (3+) 原子比大约为 4)。实验确定的 3.53(5) g/cm (3) 密度与建议的结构和非化学计量学非常一致。与温度相关的 DC 电导率表现出 Arrhenius 型行为,带隙为 0.64 eV。半导体行为被解释为不同价态钒阳离子之间的电子跳跃
VOOH nanosheets with enhanced capacitance as supercapacitor electrode
作者:Chang Xu、Ming Li、Kaibin Li、Zengyan Du、Jiawang Chen、Fengxia Zou、Sichao Xu、Nian Li、Guanghai Li
DOI:10.1016/j.jallcom.2021.159367
日期:2021.7
Vanadyl hydroxide (VOOH) nanosheets have been synthesized for the first time using commercial vanadium pentoxide (V2O5) as vanadium source by a facile one-step hydrothermal reaction. The morphology and crystal structure of VOOH can be controlled simply by adjusting the ratio of ethylene glycol (EG) to deionized water (H2O) in the hydrothermal reaction. The electrochemical performance of the VOOH nanosheets
氢氧化钒(VOOH)纳米片是首次使用商品五氧化二钒(V 2 O 5)作为钒源,通过简便的一步水热反应合成的。通过调节水热反应中乙二醇(EG)与去离子水(H 2 O)的比例,可以简单地控制VOOH的形态和晶体结构。在1 mol L -1 LiClO 4 /碳酸亚丙酯中研究了VOOH纳米片作为超级电容器电极材料的电化学性能,发现VOOH纳米片的最高比电容为323 F g -1。 0.2 A g -1由于它们的比表面积和电化学活性更高,是VOOH纳米颗粒和报道的VOOH中空球的3倍。同时,VOOH纳米片还表现出良好的循环稳定性,在2A g -1的电流密度下2000次循环后的电容保持率为70%。这项工作表明,VOOH纳米片作为二维材料家族的新成员,不仅可以通过水热法简单地合成,而且在超级电容器应用中显示出出色的电化学性能。
Radio‐Frequency Reactively Sputtered VO x Thin Films Deposited at Different Oxygen Flows
作者:A. Lourenço、A. Gorenstein、S. Passerini、W. H. Smyrl、M. C. A. Fantini、M. H. Tabacniks
DOI:10.1149/1.1838327
日期:1998.2.1
The effect of differentoxygenflow rate on the properties of vanadium oxide thinfilms formed by radio-frequency, reactivesputtering deposition are investigated. The stoichiometry of the as-deposited films was investigated by Rutherford backscattering spectrometry. For high oxygenflows, films were mainly V 2 O 5 while a lower oxide was obtained at the lowest flow. Forward recoil spectrometry indicated
研究了不同氧气流量对射频反应溅射沉积形成的氧化钒薄膜性能的影响。通过卢瑟福背散射光谱法研究了沉积膜的化学计量。对于高氧流量,薄膜主要是 V 2 O 5 而在最低流量下获得较低的氧化物。前向反冲光谱表明薄膜中含有大量的氢。X-射线衍射表明薄膜是无定形的。还研究了这种薄膜在锂嵌入时显示的电致变色。在高氧气流下沉积的样品是透明/黄色的,并显示出有些复杂的电致变色行为。当锂插入高达 25 mC/cm 2 时,这些薄膜在高于 500 nm 的波长下用作阴极着色材料,在较低波长下用作阳极着色材料。对于更高的插入水平,观察到相反的行为。在非常低的 O 2 流量下沉积的样品没有显示出电致变色行为。
Synthesis, characterization, and inelastic neutron scattering study of hydrogen insertion compounds of VO2(rutile)
作者:A.M. Chippindale、P.G. Dickens、A.V. Powell
DOI:10.1016/0022-4596(91)90327-e
日期:1991.8
VO2−x(OH)x formed by the high-pressure, high-temperature decomposition of ammonium metavanadate, reported previously. The vibrational spectrum of H0.3VO2 has been measured using inelasticneutronscattering spectroscopy. The spectrum and the corresponding vibrational analysis further confirm that the hydrogeninsertioncompound can be formulated as an oxyhydroxide.
氢插入化合物H x VO 2(金红石)(0 < x <0.37)是在环境温度下通过化学方法,氢溢出和电化学方法制备的,随后通过粉末X射线衍射和化学分析进行表征。对于H x HO 2(0.16 < x <0.37),发生单斜晶母氧化物的变形,从而得到正交晶状体金红石相关结构,其晶格参数类似于高压形成的VO 2- x(OH)x的晶格参数,高温钒酸铵的高温分解,先前已有报道。H 0.3 VO 2的振动光谱已经使用非弹性中子散射光谱法进行了测量。光谱和相应的振动分析进一步证实,氢插入化合物可以配制成羟基氧化物。