S=+147 μV/K at 380 K), and Schottky-type specific heat with a small Sommerfeld constant (γ=4.48(7) mJ/Co mol K2), were observed. These results suggest that the compound possesses a metallic electronic state with a small density of states at the Fermi level. The doped holes are localized at low temperatures due to disorder in the crystal. The carriers probably originate from slight off-stoichiometry of the
首次合成了
钴酸
钙CaCo 2 O 4,并通过粉末X射线衍射研究,测量磁化率,比热,电阻率和热电功率对其进行了表征。的CaCo 2个Ó 4结晶在网吧2 ø 4(
铁酸钙)型结构,包括一个边沿和角落共享的CoO 6八面体网络。CaCo 2 O 4的结构属于正交晶系(空间群:Pnma),其晶格参数为a = 8.789(2)Å,b = 2.9006(7)Å和c= 10.282(3)Å。居里-外斯状与近三价
钴低自旋态(Co的磁化率行为3+,3 d t2g6 ,小号= 0),半导体状电阻率的温度依赖性(ρ = 3×10 -1 Ω厘米380 K)在低温下具有主要的跳跃传导,取决于
金属温度的大热电功率(Seebeck系数:在380 K时S = + 147μV/ K),并且肖特基型比热具有小的Sommerfeld常数(γ = 4.48) (7)mJ /
钴摩尔K 2),进行观察。这些结果表明该化合物具有在