The MnâGa complexes of the general formula L(CO)4Mn}a[GaR3âa(Do)](L = CO, R = alkyl; Do =N-Lewis-donor) are obtained in yields 90% and used as volatile single source precursors for the gas-phase deposition of thin MnâGa alloy films.
                                    通式为L(CO)4Mn}a[GaR3âa(Do)](L = CO,R = 烷基;Do = N-刘易斯-捐献者)的
锰镓配合物的产量为 90%,可用作气相沉积
锰镓合
金薄膜的挥发性单源前体。