Group 4 transition metal-containing film forming compositions comprising Group 4 transition metal atrane precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 4 transition metal-containing films on one or more substrates via vapor deposition processes.
                            本文揭示了含有第四族过渡
金属阿特兰前体的第四族过渡
金属薄膜形成组合物。还揭示了使用所述前体合成和使用方法,通过蒸发沉积过程在一个或多个基板上沉积含有第四族过渡
金属的薄膜。