[Ni(η²-bis(p-trifluoromethylphenyl)acetylene)(dmpe)] | 1401083-29-1

• 英文名称: [Ni(η²-bis(p-trifluoromethylphenyl)acetylene)(dmpe)]
• 英文别名: [Ni(η²-bis(p-trifluoromethylphenyl)acetylene)(1,2-bis(dimethylphosphino)ethane)]
• CAS: 1401083-29-1
• 化学式: C₂₂H₂₄F₆NiP₂
• 分子量: 523.06
• InChiKey: SMVBOJNPKYLQTN-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
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• 重原子数：
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• 可旋转键数：
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• 环数：
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• sp3杂化的碳原子比例：
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• 拓扑面积：
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• 氢给体数：
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• 氢受体数：
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反应信息

• 作为产物：
  描述：

  1,2-双(二甲基瞵)乙烷 以 甲苯 为溶剂， 反应 62.0h， 生成 [Ni(η²-bis(p-trifluoromethylphenyl)acetylene)(dmpe)]
  参考文献：
  名称：

  Preparation and Properties of Perarylated 3,4-Disila-1,5-hexadienes. A Fluorescent Disilane Accommodated in the Crystal Lattice

  摘要：

  A dinickel complex with bridging silyl ligands, [{Ni(PCy3)}(2)(mu-SiHPh2)(2)] (1), prepared from [Ni(cod)(2)], PCy3, and H2SiPh2, underwent exchange of the PCy3 ligands with 1,2-bis(dimethylphosphino)-ethane (dmpe) to yield a complex coordinated by the two bidentate ligands, [{Ni(dmpe)}(2)(mu-SiHPh2)(2)]. Reactions of diarylacetylenes, ArC CAr (Ar = C6H5, C6H4OMe-4, C6H4Me-(4), C6H4F-(4), C6H4CF3-4, C6H4CN-4), with 1 in a 4/1 ratio afforded 1,2-bis{(E)-1,2-diarylethenyl}-1,1,2,2-tetraphenyldisilanes via addition of the Si-H bond of the bridging silyl ligand to the alkynes and subsequent coupling of the resulted tertiary silyl ligand. X-ray crystallography of the dialkenyldisilanes resulted in three kinds of conformation of the C=C-Si-Si-C=C chain depending on the aryl group at the vinyl carbon. The disilane with phenyl substituents, 4a (Ar = C6H5), contained a planar C=C-Si-Si-C=C alignment with small Si-Si-C=C torsion angles (1.7(5) and 6.9(5)degrees). The other dialkenyldisilanes, 4b,c,e,f, had much larger torsion angles (30.9(3)-49.2(3)degrees), and the twisted conformation of the molecules was classified into two types. Compound 4a exhibited a fluorescence maximum at 488 nm in the solid state, while 4b f showed peaks at 393-427 nm. The red shift in the emission of 4a is ascribed to orthogonal intramolecular charge transfer (OICT) from the electron-donating Si Si to accepting C=C bonds.

  DOI：

  10.1021/om300551t