| 238092-77-8

• CAS: 238092-77-8
• 化学式: C₂₀H₅₆As₂Ga₂Si₄
• 分子量: 698.296
• InChiKey: PNTKHQYSSCOAHL-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  None
• 重原子数：
  None
• 可旋转键数：
  None
• 环数：
  None
• sp3杂化的碳原子比例：
  None
• 拓扑面积：
  None
• 氢给体数：
  None
• 氢受体数：
  None

反应信息

• 作为反应物：
  描述：

  以 neat (no solvent) 为溶剂， 生成 gallium arsenide
  参考文献：
  名称：

  Preparation of single-source precursors to nanocrystalline gallium arsenide and gallium antimonide. X-ray crystal structures of [Et2GaAs(SiMe3)2]2, [Et2GaSb(SiMe3)2]2 and Et2b(SiMe3)2

  摘要：

  The 1:1 mole ratio reaction of Et2GaCl with As(SiMe3)(3) leads to the isolation of [Et2GaAs(SiMe3)(2)](2) (1), while the analogous reaction with Sb(SiMe33) results in the formation of [Et2GaSb(SiMe3)(2)](2) (2). The mixed-pnicogen compound Et2GaAs(SiMe3)(2)Ga(Et)(2)Sb(SiMe3)(2) (3) was obtained from both the equilibration of 1 and 2, as well as the 2:1:1 mole ratio reaction of Et2GaCl with As(SiMe3)(3) and Sb(SiMe3)(3). X-ray crystal structures are reported for 1, 2 and 3, as well as a variable temperature H-1-NMR study of 2 and 3. The dimer 2 was found to exhibit a dimer/trimer equilibrium in solution. Thermolysis of all three compounds results in the formation of GaAs, GaSb or GaAsxSb(1-x) through a beta-hydride elimination pathway. (C) 1999 Elsevier Science S.A. All rights reserved.

  DOI：

  10.1016/s0022-328x(98)01184-x
• 作为产物：
  描述：

  以 正己烷 、 氘代甲苯 为溶剂， 生成
  参考文献：
  名称：

  Preparation of single-source precursors to nanocrystalline gallium arsenide and gallium antimonide. X-ray crystal structures of [Et2GaAs(SiMe3)2]2, [Et2GaSb(SiMe3)2]2 and Et2b(SiMe3)2

  摘要：

  The 1:1 mole ratio reaction of Et2GaCl with As(SiMe3)(3) leads to the isolation of [Et2GaAs(SiMe3)(2)](2) (1), while the analogous reaction with Sb(SiMe33) results in the formation of [Et2GaSb(SiMe3)(2)](2) (2). The mixed-pnicogen compound Et2GaAs(SiMe3)(2)Ga(Et)(2)Sb(SiMe3)(2) (3) was obtained from both the equilibration of 1 and 2, as well as the 2:1:1 mole ratio reaction of Et2GaCl with As(SiMe3)(3) and Sb(SiMe3)(3). X-ray crystal structures are reported for 1, 2 and 3, as well as a variable temperature H-1-NMR study of 2 and 3. The dimer 2 was found to exhibit a dimer/trimer equilibrium in solution. Thermolysis of all three compounds results in the formation of GaAs, GaSb or GaAsxSb(1-x) through a beta-hydride elimination pathway. (C) 1999 Elsevier Science S.A. All rights reserved.

  DOI：

  10.1016/s0022-328x(98)01184-x

文献信息

• Synthesis and characterization of single-source precursors to nanocrystalline GaP, GaPxAs1−x, and GaPxSb1−x. X-ray crystal structures of [Et2GaP(SiMe3)2]2, (Me3Si)2P[μ-GaEt2]2As(SiMe3)2, and (Me3Si)2P[μ-GaEt2]2Sb(SiMe3)2
  作者：Richard J Jouet、Richard L Wells、Arnold L Rheingold、Christopher D Incarvito

  DOI：10.1016/s0022-328x(00)00055-3

  日期：2000.4

  The 1:1 mole ratio reaction of Et2GaCl with P(SiMe3)(3) resulted in the formation of [Et2GaP(SiMe3)(2)](2) (1). The mixed-pnicogen compounds (Me3Si)(2)P[mu-GaEt2](2)As(SiMe3)(2) (2) and (Me3Si)(2)P[mu-GaEt2](2)Sb(SiMe3)(2) (3) were prepared from the 2:1:1 mole ratio reactions of Et2GaCl with P(SiMe3)(3) and As(SiMe3)(3), and P(SiMe3)(3) and Sb(SiMe3)(3), respectively. Compounds 2 and 3 were also synthesized by comproportionation reactions of 1 and [Et2GaAs(SiMe3)(2)](2), and 1 and [Et2GaSb(SiMe3)(2)](2), respectively. Characterization of 1, 2, and 3 was accomplished using multinuclear NMR, elemental analysis, mass spectrometry, and single-crystal X-ray crystallographic analysis. The X-ray crystal structures of compounds 1, 2 or 3 are reported. Thermolysis of 1, 2, and 3 results in the formation of nanocrystalline GaP, GaPxAs1-x, or GaPxSb1-x, respectively. Compound 3 represents the first example of a compound containing a P(mu-Ga)(2)Sb core. (C) 2000 Elsevier Science S.A. All rights reserved.