silicon pyrophosphate

• 分子结构分类: 无机化合物 - 混合金属/非金属化合物 - 类金属含氧阴离子化合物
• 英文名称: silicon pyrophosphate
• 英文别名: Phosphonato phosphate;silicon(4+)
• 化学式: O₇P₂*Si
• 分子量: 202.029
• InChiKey: LZUYAGGHRNOWRY-UHFFFAOYSA-J

计算性质

• 辛醇/水分配系数(LogP)：
  -3.72
• 重原子数：
  10
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  136
• 氢给体数：
  0
• 氢受体数：
  7

反应信息

• 作为反应物：
  描述：

  silicon pyrophosphate 在 甲烷 作用下， 以 solid 为溶剂， 生成 silica gel
  参考文献：
  名称：

  Ulanova, N. M.; Shevchenko, N. P., Inorganic Materials, 1990, vol. 26, p. 1090 - 1093

  摘要：

  DOI：
• 作为产物：
  描述：

  silicophosphate 以 neat (no solvent) 为溶剂， 生成 silicon pyrophosphate
  参考文献：
  名称：

  Structure of a new form of silicon phosphate (SiP2O7) synthesized at high pressures and temperatures

  摘要：

  A new high-pressure phase of SiP2O7 has been found and its crystal structure solved and refined from a single crystal grown at a condition of 16 GPa and 2000 degrees C and recovered to ambient conditions. The material is monoclinic, with the space group P2(1)/c and lattice parameters a = 4.3042(7) angstrom, b = 7.1505(12) angstrom, c = 6.2897(11) angstrom, beta = 103.805(2). The structure contains SiO6 octahedra in a corner-sharing arrangement with P2O7 dimers, the same structural elements and vertex-sharing present in all the low-pressure forms of SiP2O7. However, the network is more condensed: the topology of the packing of SiO6 octahedra and P2O7 dimers (represented by Si and the bridging oxygen that both lie on centers of symmetry) is that of the CsCl structure, with some distortion. The resulting phase is 11.2% to 22.3% denser than the various low-pressure forms of SiP2O7. The structural data indicates that the P2O7 dimers are linear (P-O-P angle = 180 degrees), an unusual feature for phosphates. (C) 2012 Elsevier Inc. All rights reserved.

  DOI：

  10.1016/j.jssc.2012.02.031

文献信息

• Pressureless Sintering of ?-Si₃N₄Porous Ceramics Using a H₃PO₄Pore-Forming Agent
  作者：Fei Chen、Qiang Shen、Faqiang Yan、Lianmeng Zhang

  DOI：10.1111/j.1551-2916.2007.01800.x

  日期：2007.8

  A new method for preparing high bending strength porous silicon nitride (Si3N4) ceramics with controlled porosity has been developed by using pressureless sintering techniques and phosphoric acid (H3PO4) as the pore‐forming agent. The fabrication process is described in detail and the sintering mechanism of porous ceramics is analyzed by the X‐ray diffraction method and thermal analysis. The microstructure and mechanical properties of the porous Si3N4 ceramics are investigated, as a function of the content of H3PO4. The resultant high porous Si3N4 ceramics sintered at 1000°–1200°C show a fine porous structure and a relative high bending strength. The porous structure is caused mainly by the volatilization of the H3PO4 and by the continous reaction of SiP2O7 binder, which could bond on to the Si3N4 grains. Porous Si3N4 ceramics with a porosity of 42%–63%, the bending strength of 50–120 MPa are obtained.

  一种制备高弯曲强度且具有可控孔隙率的多孔氮化硅（Si3N4）陶瓷的新方法已被开发，该方法采用无压烧结技术，并以磷酸（H3PO4）作为造孔剂。详细描述了制备工艺，并通过X射线衍射法和热分析对多孔陶瓷的烧结机制进行了分析。探讨了多孔Si3N4陶瓷的微观结构和机械性能，重点研究了H3PO4含量对其性能的影响。在1000°C至1200°C温度下烧结所得的高孔隙率多孔Si3N4陶瓷展现出优异的多孔结构和较高的弯曲强度。这种多孔结构主要归因于H3PO4的挥发以及SiP2O7粘结剂的持续反应，该粘结剂能够牢固地附着在Si3N4颗粒表面。最终获得的多孔Si3N4陶瓷孔隙率为42%至63%，弯曲强度达到50至120 MPa。
• Direct electrochemical synthesis of oxygenates from ethane using phosphate-based electrolysis cells
  作者：Yusuke Honda、Naoya Fujiwara、Shohei Tada、Yasukazu Kobayashi、Shigeo Ted Oyama、Ryuji Kikuchi

  DOI：10.1039/d0cc05111j

  日期：——

  partial oxidation at 220 °C and ambient pressure using an electrolysis cell with a proton-conducting electrolyte, CsH2PO4/SiP2O7, and Pt/C electrodes. The ethane conversion and the selectivity to the products increased with the voltage applied to the cell. It was found that O species generated by water electrolysis functioned as a favorable oxidant for partial oxidation of ethane on the Pt/C anode at intermediate

  通过使用带有质子传导电解质，CsH 2 PO 4 / SiP 2 O 7和Pt / C电极的电解槽，在220°C和环境压力下进行部分氧化，将乙烷直接转化为乙醛和乙醇。乙烷转化率和产物选择性随施加到电解池的电压而增加。已经发现，在中间温度下，水电解产生的O物种起着使Pt / C阳极上的乙烷部分氧化的有利氧化剂的作用。这项研究中记录的乙醛和乙醇的生产率显着高于以前的报告。
• Proton Conduction in In[sup 3+]-Doped SnP[sub 2]O[sub 7] at Intermediate Temperatures
  作者：Masahiro Nagao、Toshio Kamiya、Pilwon Heo、Atsuko Tomita、Takashi Hibino、Mitsuru Sano

  DOI：10.1149/1.2210669

  日期：——

  spectroscopy (FTIR), temperature-programmed desorption (TPD), X-ray diffraction (XRD), and electrochemical techniques. Undoped SnP 2 O 7 showed overall conductivities greater than 10 -2 S cm -1 in the temperature range of 75-300°C. The proton transport numbers of this material at 250°C under various conditions were estimated, based on the ratio of the electromotive force of the galvanic cells to the theoretical

  基于 SnP 2 O 7 的质子导体通过傅里叶变换红外光谱 (FTIR)、程序升温脱附 (TPD)、X 射线衍射 (XRD) 和电化学技术进行表征。未掺杂的SnP 2 O 7 在75-300℃的温度范围内表现出大于10 -2 S cm -1 的总电导率。根据原电池的电动势与理论值之比，估计该材料在 250°C 在各种条件下的质子传输数，在加湿 H 2 中为 0.97-0.99，在燃料电池下为 0.89-0.92使适应。In 3+ 部分取代Sn 4+ 导致质子传导率增加（例如，在250℃下从5.56 X 10 -2 到1.95 X 10 -1 S cm -1 ）。FTIR 和 TPD 测量表明，掺杂对质子电导率的影响可归因于体 Sn 1-x In x P 2 O 7 中质子浓度的增加。Sn 1-x In x P 2 O 7 块体中P 2 O 2 离子的缺乏使质子电导率降低了几个数量级，这被解
• The thermal dehydration of the Ca(H2PO4)2·H2OSiO2 system. Part 1. Mechanism
  作者：Tiberius C. Vaimakis、Antonios T. Sdoukos

  DOI：10.1016/0040-6031(95)02751-3

  日期：1996.5

  Abstract The thermal dehydration of the Ca(H2PO4)2·H2OSiO2 system has been studied by a continuous thermogravimetric mode method, and by a batch method, heating the mixtures in the molar ratios SiO 2 Ca(H 2 PO 4 ) 2 · H 2 O = 0.5, 1, 2 and 3 at 150, 185, 245, 275, 320, 430 and 780°C. The batches, after cooling, were examined by X-ray diffraction (XRD) and infrared spectroscopy (IR) to identify the

  摘要 采用连续热重模式和间歇法，以SiO 2 Ca(H 2 PO 4 ) 2 · 摩尔比加热混合物，研究了Ca(H2PO4)2·H2OSiO2体系的热脱水。在 150、185、245、275、320、430 和 780°C 下，H 2 O = 0.5、1、2 和 3。冷却后的批料通过 X 射线衍射 (XRD) 和红外光谱 (IR) 进行检查，以确定中间产品和最终产品。最终产物主要是 Ca(PO3)2 和 SiP2O7，而焦磷酸和三磷酸以及 Si(HPO4)2 被检测为中间产物。存在的 SiO2 量会影响在五个阶段发生的脱水。随着SiO2量的增加，第一、二、四阶段对水分子的去除增加，而在第三、五阶段则减少。
• The synthesis and characterization of crystalline phosphates of thorium, uranium and neptunium
  作者：C.E. Bamberger、R.G. Haire、G.M. Begun、H.E. Hellwege

  DOI：10.1016/0022-5088(84)90314-x

  日期：1984.10