gallium trichloride, trmethylsilylazide adduct | 188658-35-7

• 英文名称: gallium trichloride, trmethylsilylazide adduct
• 英文别名: trichloro-[diazonio(trimethylsilyl)amino]gallanuide
• CAS: 188658-35-7
• 化学式: C₃H₉Cl₃GaN₃Si
• 分子量: 291.292
• InChiKey: HXYBKHGTDKDKLU-UHFFFAOYSA-K

计算性质

• 辛醇/水分配系数(LogP)：
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• 重原子数：
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• 可旋转键数：
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• 环数：
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• sp3杂化的碳原子比例：
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• 拓扑面积：
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• 氢给体数：
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• 氢受体数：
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反应信息

• 作为反应物：
  描述：

  gallium trichloride, trmethylsilylazide adduct 以 neat (no solvent) 为溶剂， 生成 gallium nitride
  参考文献：
  名称：

  Synthesis and Structure of a Novel Lewis Acid−Base Adduct, (H₃C)₃SiN₃·GaCl₃, en Route to Cl₂GaN₃ and Its Derivatives:  Inorganic Precursors to Heteroepitaxial GaN

  摘要：

  The formation of a novel Lewis acid-base complex between the silyl azide Si(CH3)(3)N-3 and GaCl3 having the formula (H3C)(3)SiN3 . GaCl3 (1) is demonstrated. The X-ray crystal structure of 1 shows that the electron-donating site is the nitrogen atom directly bonded to the organometallic group. Compound 1 crystallizes in the orthorhombic space group Pnma, with cell. dimensions a = 15.823(10) Angstrom, b = 10.010(5) Angstrom, c = 7.403(3) Angstrom, and Z = 4. Low-temperature decomposition of 1 via loss of (H3C)(3)SiCl yields Cl2GaN3 (2), which serves as the first totally inorganic (C,H-free) precursor to heteroepitaxial GaN by ultrahigh-vacuum chemical vapor deposition. A volatile monomeric Lewis acid-base adduct of 2 with trimethylamine, Cl2GaN3 . N(CH3)(3) (3), has also been prepared and utilized to grow high-quality GaN on Si and basal plane sapphire substrates. The valence bond model is used to analyze bond lengths in organometallic azides and related adducts.

  DOI：

  10.1021/ic961273r
• 作为产物：
  描述：

  gallium(III) trichloride 、 叠氮基三甲基硅烷 以 甲苯 为溶剂， 生成 gallium trichloride, trmethylsilylazide adduct
  参考文献：
  名称：

  GaCl3和B（C6F5）3的三甲基甲硅烷基伪卤化物加合物

  摘要：

  用甲苯中的路易斯酸GaCl 3和B（C 6 F 5）3处理Me 3 Si-X（X = CN，N 3，OCN和SCN），得到所需的加合物Me 3 Si-X→GaCl 3和Me 3 Si-X→B（C 6 F 5）3。分离了所有合成的加合物，并进行了完整表征，包括单晶结构阐明。在实验和理论数据的基础上讨论了不同的结构，形成的热力学和电荷转移效应。

  DOI：

  10.1002/ejic.202100237