[(C5Me5)Ga(μ3-Se)]4 | 182362-79-4

• 英文名称: [(C5Me5)Ga(μ3-Se)]4
• CAS: 182362-79-4
• 化学式: C₄₀H₆₀Ga₄Se₄
• 分子量: 1135.65
• InChiKey: HDUIWOATMVERIN-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
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• 重原子数：
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• 可旋转键数：
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• 环数：
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• sp3杂化的碳原子比例：
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• 拓扑面积：
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• 氢给体数：
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• 氢受体数：
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反应信息

• 作为产物：
  描述：

  η1-C5Me5GaCl2 、 双(三甲基硅烷基)硒醚 以 甲苯 为溶剂， 以80%的产率得到[(C5Me5)Ga(μ3-Se)]4
  参考文献：
  名称：

  Synthesis of Gallium Chalcogenide Cubanes and Their Use as CVD Precursors for Ga₂E₃ (E = S, Se)

  摘要：

  The gallium-chalcogen heterocubanes [Cp*Ga(mu(3)-E)](4), E = S (1) and Se (2), and [Cp(+)Ga(mu(3)-Se)](4) (3) have been synthesized by dehalosilylation reactions between E(SiMe(3))(2) (E = S, Se) and RGaCl(2), R = Cp*(C(5)Me(5)) and Cp(+) (C(5)Me(4)Et), and are characterized by elemental analyses, NMR spectroscopy, and mass spectrometry. The use of compounds 1 and 2 as single-source MOCVD precursors for the low-temperature growth of Ga(2)E(3) films at 290-310 degrees C is described. The as-deposited films were amorphous; however, upon thermal annealing (500 degrees C) the films crystallized to the thermodynamic cubic phases, while the corresponding tellurium analog decomposed in the solid state at 220 degrees C forming a gallium-rich product.

  DOI：

  10.1021/om960480w