tris(methyl(n-butyl)dithiocarbamato)indium(III) | 208592-47-6

• 英文名称: tris(methyl(n-butyl)dithiocarbamato)indium(III)
• CAS: 208592-47-6
• 化学式: C₁₈H₃₆InN₃S₆
• 分子量: 601.72
• InChiKey: ZPCRTMXKQISBCA-UHFFFAOYSA-K

计算性质

• 辛醇/水分配系数(LogP)：
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• 重原子数：
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• 可旋转键数：
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• 环数：
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• sp3杂化的碳原子比例：
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• 拓扑面积：
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• 氢给体数：
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• 氢受体数：
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反应信息

• 作为反应物：
  描述：

  tris(methyl(n-butyl)dithiocarbamato)indium(III) 、 三乙基铟 在 air 作用下， 以 neat (no solvent) 为溶剂， 以85%的产率得到[Et2In(OSS2CNMe(n-Bu)]2
  参考文献：
  名称：

  Synthesis of novel mixed indium(III) chalcogenolato complexes: Potential precursors for indium chalcogenides

  摘要：

  Novel organometallic and metal-organic indium complexes, [Et2In(OS2CNMe '' Bu)](2) (1), [In{SeP ' Pr-2)(2)N}(S2CNEt2)(2)] (2) and [In{(SeP ' Pr-2)(2)N}(S2P ' BU2)(2)] (3), have been synthesised and characterised. Compound (1) was formed by the insertion of oxygen atoms into the M-S bonds of thiocarbamate ligands, whereas the mixed-chalcogenide complexes (2) and (3) were prepared by the reaction of Na(S2CNEt2)(2) or Na(S2P ' Bu-2)(2) with In[(SeP ' Pr-2)(2)N](2)Cl. The structures of all three compounds were determined by X-ray single crystallographic methods. The dimeric structure of (1) consists of two five membered and one four membered rings formed by chelating and bridging of both dithioperoxycarbarnato ligands. The structures of both (2) and (3) are based on monomers in each case the coordination around indium is distorted octahedral. (c) 2005 Elsevier Ltd. All rights reserved.

  DOI：

  10.1016/j.poly.2005.09.012
• 作为产物：
  描述：

  氯化铟 、 sodium N-butyl-N-methyldithiocarbamate dihydrate 以 not given 为溶剂， 生成 tris(methyl(n-butyl)dithiocarbamato)indium(III)
  参考文献：
  名称：

  Single source molecular precursors for the deposition of III/VI chalcogenide semiconductors by MOCVD and related techniques

  摘要：

  由于III/VI族（13/16）半导体材料在各种电子应用中的潜力，人们对它们的兴趣又重新燃起。因此，具有16族配体的金属有机化合物和有机金属化合物的合成和表征成为热门话题。这些分子被用作前体，在金属和硫之间存在直接键合。因此，新化学的发展与新型材料的沉积之间形成了密切的相互作用。

  DOI：

  10.1039/b004454g