H)C(But)N(Dip)}] (E = Ge, 5; Sn, 6). The reduction of the germanium(II) precursor, 3, also afforded the germanium(II) amide complex [(ButNacnac)GeN(H)(Dip)}] (7). The mechanisms of formation of the complexes are thought to involve a number of steps, including reductive ring contraction reactions. The crystallographic and spectroscopic data for [(THF)Liη5-EC(But)C(H)C(But)N(Dip)}] indicate a significant
体积庞大的
β-二酮亚胺基
锂络合物[Li(Bu t Nacnac)](Bu t Nacnac = [N(Dip)C(Bu t)} 2 CH] -,Dip = C 6 H 3 Pr i 2的反应-2,6)与G
ECl 2 ·
二恶烷反应生成
氯化
锗(II)络合物[(Bu t Nacnac)G
ECl](3)。它和它的已知
锡类似物[[ Bu t Nacnac)SnCl](4),经晶体学表征,发现为固态单体。与THF中的元素
锂两种复合的减少导致N-杂环germylidenide和stannylidenide阴离子,即
锂络合物。,[(THF)栗η 5 -
EC(BU吨)C(H)C(卜吨)N (Dip)}](E = Ge,5 ; Sn,6)。
锗(II)的前体,所述的还原3,也得到
锗(II)酰胺络合物[(卜吨Nacnac)葛N(H)(DIP)}](7)。络合物的形成机理被认为涉及许多步骤,包括还原性环收缩反应。[(THF)Li