(5-methyl-2,4-hexadionate)Cu(I)(bis(trimethylsilyl)acetylene) | 1065644-94-1

• 英文名称: (5-methyl-2,4-hexadionate)Cu(I)(bis(trimethylsilyl)acetylene)
• 英文别名: (5-methyl-2,4-hexandionate)Cu(I)(BTMSA)
• CAS: 1065644-94-1
• 化学式: C₇H₁₁O₂*C₈H₁₈Si₂*Cu
• 分子量: 361.111
• InChiKey: ZJWOUAAGFUVCTQ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.75
• 重原子数：
  20.0
• 可旋转键数：
  3.0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.67
• 拓扑面积：
  34.14
• 氢给体数：
  0.0
• 氢受体数：
  2.0

反应信息

• 作为产物：
  描述：

  copper(I) oxide 、 二(三甲基甲硅烷基)乙炔 、 异丁酰基丙酮 以 not given 为溶剂， 以69.5%的产率得到(5-methyl-2,4-hexadionate)Cu(I)(bis(trimethylsilyl)acetylene)
  参考文献：
  名称：

  Novel valuable fluorine free copper(I) precursors for copper chemical vapor deposition

  摘要：

  Novel fluorine free (beta-diketonate)Cu((I))BTMSA precursors (where BTMSA is bis(trimethylsilyl) acetylene) were prepared in good yield (63-80%) by a simple acid-base reaction. The starting beta-diketone structure was modified for tailoring physico-chemical properties of synthesized precursors. High volatile, relative thermally stable and low-melting precursors were prepared when asymmetric beta-diketones were used. By using the (1-(cyclobutyl)-1,3-butandionate)Cu((I))BTMSA precursor, highly pure, compact and smooth copper films were deposited on Ta/TaN substrates at deposition temperatures as low as 150 degrees C. (C) 2009 Elsevier Ltd. All rights reserved.

  DOI：

  10.1016/j.poly.2009.09.029