volatility makes the organodihydrido compounds 5 and 8 suitable precursors for the deposition of aluminum and gallium, respectively, in the MOCVD process. Ex-situ characterization with sputter auger electron spectroscopy (SAES) provides information about the chemical composition of the aluminum and gallium layers. Irradiation of 5 and 8 in solution is followed by decomposition into the respective metal
[(R 2 NCH 2 CH 2)C 5 H 4 ] MCl 2类型的(N,N-二烷基
氨基乙基)
环戊二烯基13元素二
氯化物3和4 M = Al,R = Me(3);通过[(R 2 NCH 2 CH 2)C 5 H 4 ] K的盐消除反应制备M = Ga,R =i- Pr(4)} R = Me(1),i- Pr(2)}。与相应的13族元素三
氯化物。的反应用LiAlH 4进行3处理,以几乎定量的产率得到了
环戊二烯基二
氢化铝[(Me 2 NCH 2 CH 2)C 5 H 4 ] AlH 2(5)。有机
镓的酰
氯的治疗[(R 2 NCH 2 CH 2)C 5 H ^ 4 ]的GaCl 2 R =异PR(4)中,Me(6)}上LiAlH 4经由转移
金属化导致
有机铝dihydrides [(R 2 NCH 2 CH 2)C 5 H 4 ] AlH 2 R = Me(5),i- Pr(7)},收率高。6与LiGaH