| 329363-36-2

• CAS: 329363-36-2
• 化学式: C₄H₁₂In₂N₆
• 分子量: 373.819
• InChiKey: PLKQRLJTYGBNLW-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  None
• 重原子数：
  None
• 可旋转键数：
  None
• 环数：
  None
• sp3杂化的碳原子比例：
  None
• 拓扑面积：
  None
• 氢给体数：
  None
• 氢受体数：
  None

反应信息

• 作为产物：
  描述：

  迭氮酸 、 三甲基铟 以 乙醚 、 甲苯 为溶剂， 以68%的产率得到
  参考文献：
  名称：

  Structural characterization of a dimeric dimethylindium azide and its use as a single-source precursor for InN thin films

  摘要：

  Dimeric dimethylindium azide, [Me2In(mu -N-3)](2) (1), was prepared from the reaction of Me3In with HN3. A single-crystal X-ray diffraction study reveals that 1 exists as a three-dimensional network of three symmetry-independent azide-bridged, centrosymmetric dimers. In each dimer, the two azido groups lying in the same plane of the (In-N)(2) ring have a linear geometry, and the two indium atoms exhibit a distorted octahedral geometry. InN thin films were grown with 1 on Si(lll) substrates in the temperature range 350-450 degreesC in the absence of carrier gas by a low-pressure chemical vapor deposition method. The stoichiometry of the resulting films was determined by X-ray photoelectron spectroscopy (XPS). The films are nitrogen-deficient InN (In:N approximate to 1:0.60) with:high surface impurity concentrations (C approximate to 20%, O approximate to 27%). The film structure was examined by X-ray diffraction (XRD) and: scanning electron microscopy (SEM). The films appear to be polycrystalline and show diffraction patterns characteristic of the expected hexagonal wurtzite structure. (C) 2000 Elsevier Science B.V. All rights reserved.

  DOI：

  10.1016/s0022-328x(00)00581-7