HfCl4(NH(SiMe3)2 | 1018032-65-9

• 英文名称: HfCl4(NH(SiMe3)2
• CAS: 1018032-65-9
• 化学式: C₆H₁₉Cl₄HfNSi₂
• 分子量: 481.697
• InChiKey: CIFBAJXARAMAFC-UHFFFAOYSA-J

计算性质

• 辛醇/水分配系数(LogP)：
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• 重原子数：
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• 可旋转键数：
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• 环数：
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• sp3杂化的碳原子比例：
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• 拓扑面积：
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• 氢给体数：
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• 氢受体数：
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反应信息

• 作为产物：
  描述：

  氯化铪 、 六甲基二硅氮烷 以 二氯甲烷 为溶剂， 以53%的产率得到HfCl4(NH(SiMe3)2
  参考文献：
  名称：

  Reactivity of ZrCl4 and HfCl4 with silylamines and thermal decomposition of the compounds [MCl4{NH(R)(SiR′3)}] (M=Zr, Hf, R=tBu, R′=Me; R=SiR′3=SiMe3, SiMe2H)

  摘要：

  The Lewis acid/base adducts [MCl4{NH(R)(SiR3')}] (M = Zr, Hf, R = tBu, R' = Me; R = SiR3' = SiMe3, SiMe2H) were synthesized by the 1:1 reaction of MCl4 with NH(R)(SiR3') in dichloromethane solution at room temperature. The decomposition of [MCl4{NH(R)(SiR3')}] proceeds with the elimination of R-3'SiCl, as shown by thermogravimetric analysis. Pyrolysis of the compounds at 620 degrees C under inert conditions (N-2, vacuum) afforded powders of composition [ClMN] or [Cl2MNH]. Preliminary low pressure chemical vapour deposition experiments show that [MCl4{NH(R)(SiR3')}] deposits thin films of metal nitride contaminated with metal oxide. (C) 2007 Elsevier Ltd. All rights reserved.

  DOI：

  10.1016/j.poly.2007.11.034