bis[chloro(μ2-1,1,3,3-tetramethylguanidinato)bis(1,1,3,3-tetramethylguanidinato)hafnium] | 920956-85-0

• 英文名称: bis[chloro(μ2-1,1,3,3-tetramethylguanidinato)bis(1,1,3,3-tetramethylguanidinato)hafnium]
• 英文别名: [HfCl(μ2-NC(NMe2)2)(NC(NMe2)2)]2
• CAS: 920956-85-0
• 化学式: C₃₀H₇₂Cl₂Hf₂N₁₈
• 分子量: 1112.91
• InChiKey: DAEXMZGHRPYMMO-UHFFFAOYSA-L

计算性质

• 辛醇/水分配系数(LogP)：
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• 重原子数：
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• 可旋转键数：
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• 环数：
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• sp3杂化的碳原子比例：
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• 拓扑面积：
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• 氢给体数：
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• 氢受体数：
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反应信息

• 作为产物：
  描述：

  氯化铪 、 四甲基胍 在 n-butyllithium 作用下， 以 乙醚 、 正己烷 、 甲苯 为溶剂， 以77%的产率得到bis[chloro(μ2-1,1,3,3-tetramethylguanidinato)bis(1,1,3,3-tetramethylguanidinato)hafnium]
  参考文献：
  名称：

  Guanidinate-Stabilized Monomeric Hafnium Amide Complexes as Promising Precursors for MOCVD of HfO₂

  摘要：

  Novel guanidinato complexes of hafnium [Hf{n(2)-((PrN)-Pr-i)(2)CNR2}(2)(NR2)(2)] (R-2 = Et-2, 1; Et, Me, 2; Me-2, 3), synthesized by insertion reactions of N,N'-diisopropylcarbodiimide into the M-N bonds of homologous hafnium amide complexes 1-3 and {[mu(2)-NC(NMe2)(2)][NC(NMe2)(2)](2)HfCl}(2) (4) using a salt metathesis reaction, are reported. Single-crystal X-ray diffraction analysis revealed that compounds 1-3 were monomers, while compound 4 was found to be a dimer. The observed fluxional behavior of compounds 1-3 was studied in detail using variable-temperature and two-dimensional NMR techniques. The thermal characteristics of compounds 1-3 seem promising for HfO2 thin films by vapor deposition techniques. Metal-organic chemical vapor deposition experiments with compound 2 as the precursor resulted in smooth, uniform, and stoichiometric HfO2 thin films at relatively low deposition temperatures. The basic properties of HfO2 thin films were characterized in some detail.

  DOI：

  10.1021/ic061056i