Gallium--uranium (3/1) | 12024-33-8

• 英文名称: Gallium--uranium (3/1)
• 英文别名: gallane;uranium
• CAS: 12024-33-8
• 化学式: Ga₃U
• 分子量: 447.198
• InChiKey: OWLGVLBHFBVYNG-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -3.55
• 重原子数：
  4
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为产物：
  描述：

  氢化镓 、 铀 在 Pd 作用下， 以 melt 为溶剂， 生成 Gallium--uranium (3/1)
  参考文献：
  名称：

  Single Crystal Growth and Fermi Surface Properties of an Antiferromagnet UPdGa₅

  摘要：

  We have succeeded in growing a high-quality single crystal of an antiferromagnet UPdGa5 by the Ga-flux method with the off-stoichiometric composition of U : Pd : Ga = 1 : 2 : 7.3. The Neel temperature T-N = 30.5 K is found to increase with increasing the residual resistivity ratio (RRR) and becomes constant for a high-quality single crystal sample whose RRR is larger than 50. The electronic state has been investigated by the de Haas-van Alphen experiment, indicating the similar cylindrical Fermi surfaces as in an antiferromagnet UPtGa5. We have also studied the pressure effect by measuring the electrical resistivity. The Neel temperature decreases with increasing pressure and becomes zero at 3.1 GPa. The antiferromagnetic state is changed into the paramagnetic state above 3.1 GPa.

  DOI：

  10.1143/jpsj.74.2277

文献信息

• Effect of Fe site distribution on the magnetic properties of UFe4Al8−xGax (.0 and 1.5) and UFexAl12−x ()
  作者：S. Sério、J.C. Waerenborgh、A.P. Gonçalves、M. Almeida、M. Godinho

  DOI：10.1016/j.jmmm.2005.09.019

  日期：2006.7

  UFe x Al 12− x ( 4.5 ⩽ x ⩽ 5.0 ) and UFe 4 Al 8− x Ga x ( x = 1.0 and 1.5) were prepared by induction melting and found to crystallize in the tetragonal ThMn 12 -type structure (space-group I4/mmm). The comparative study of magnetic properties showed that the magnetic behaviour in UFe 4 Al 8− x Ga x as Al is replaced by Ga is similar to that observed in UFe x Al 12− x with the increase of Fe concentration

  摘要 通过感应熔化制备了成分为 UFe x Al 12− x ( 4.5 ⩽ x ⩽ 5.0 ) 和 UFe 4 Al 8− x Ga x ( x = 1.0 和 1.5 ) 的半有序合金，发现它们在四方晶态 ThMn 12 型结构（空间群 I4/mmm）。磁性能对比研究表明，随着Fe浓度的增加，当Al被Ga取代时UFe 4 Al 8- x Ga x 的磁行为与在UFe x Al 12- x 中观察到的相似。在这两种情况下，都检测到排序温度 T ord 和饱和磁化强度 M sat 的增加以及铁磁特性的增强。在 UFe x Al 12- x 和含 Ga 化合物中也观察到低于 T ord 的第二个磁跃迁的存在。X 射线粉末衍射数据的 Rietveld 细化和 Mossbauer 光谱的分析与两个系列中 Fe 原子对 8f 和 8j 位点的占据一致。UFe 4 Al 8- x Ga x 和UFe
• Magnetovolume effect in UGa3
  作者：G.E. Grechnev、A.S. Panfilov、I.V. Svechkarev、Anna Delin、B. Johansson、J.M. Wills、O. Eriksson

  DOI：10.1016/s0304-8853(98)00372-2

  日期：1999.2

  The magnetic susceptibility chi of the itinerant antiferromagnetic compound UGa3 has been studied experimentally under pressure up to, kbar in the temperature range 64-300 K. This study reveals a pronounced pressure effect on magnetic properties of UGa3 and the measured pressure derivative of the Neel temperature is found to be dT(N)/dP = -1.1 K/kbar. In order to analyze the experimental magnetovolume effect, to be specific d ln chi/d ln V, the volume dependent electronic structure of UGa3 has been calculated ab initio in the paramagnetic phase by employing a relativistic full-potential LMTO method. The effect of the external magnetic field was included self-consistently by means of the Zeeman operator, as well as orbital polarization. The calculations have brought out a predominance of itinerant uranium 5f states at the Fermi energy, as well as large and competing orbital and spin contributions to chi. The calculated field-induced magnetic moment of UGa3 and its volume derivative compare favorably with our experimental results. (C) 1999 Elsevier Science B.V. All rights reserved.
• Magnetic-to-nonmagnetic transition in the pseudobinary system U(<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Sn</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mo>)</mml:mo></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
  作者：D. Kaczorowski、R. Troć、D. Badurski、A. Böhm、L. Shlyk、F. Steglich

  DOI：10.1103/physrevb.48.16425

  日期：——

  The temperature dependences of both the electrical resistivity and magnetic susceptibility were measured for the pseudobinary alloy U(Ga1-xSnx)3. Moreover, the temperature variation of the specific heat was determined for UGa3. The results show a clear evolution in magnetic behavior of the system studied from a weakly temperature-dependent paramagnetism with a long-range antiferromagnetic ordering at 67 K in UGa3 to a strongly temperature-dependent paramagnetism, but without any magnetic order, in USn3. The properties of UGa3 are discussed in terms of itinerant 5f-electron magnetism. In contrast, some arguments are given for local 5f-electrons in USn3, which behaves as a nonmagnetic ''Kondo-lattice'' system with T(K) congruent-to 60 K.
• Optical properties of itinerant<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">UGa</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mo>:</mml:mo></mml:math>Ellipsometric measurements and first-principles theory
  作者：J. Schoenes、U. Barkow、M. Broschwitz、P. M. Oppeneer、D. Kaczorowski、A. Czopnik

  DOI：10.1103/physrevb.61.7415

  日期：——

  The optical properties of the intermetallic compound UGa3 have been determined by means of ellipsometric measurements. To cover the range from 0.7 to 9.5 eV a laboratory ellipsometer and a synchrotron ellipsometer have been used. The experimental results are compared to a computation of the optical properties from a first-principles band-structure calculation on the basis of local spin-density functional theory. The rather good agreement between the calculated and experimental spectra corroborates the itinerant character of the 5f electrons in UGa3.
• Itinerant f-electron antiferromagnetism in UGa3
  作者：D. Kaczorowski、R. Hauser、A. Czopnik

  DOI：10.1016/s0921-4526(96)00538-8

  日期：1997.2

  Single crystals of the antiferromagnetic compound UGa3 were studied by means of pressure dependent electrical resistivity measurements. The Neel temperature was found to decrease with rising pressure at the rate of -1.4 K/bar. A rapid reduction of T-N was also observed in the electrical resistivity studies of the pseudobinary system U(Ga1-xGex)(3), where the substitution for Ga of a smaller atom was equivalent to a positive chemical pressure. The results corroborate an itinerant-electron nature of the magnetism in UGa3 which was suggested before on the basis of the peculiar magnetic and thermodynamic properties of this compound.