source precursor produced thin films of 4H-WS2, identified by grazing incidence X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy; the tungsten thiochloride complex is the first single source low pressure CVD precursor for WS2. In contrast, the mononuclear W(V) complex, [WSCl3iPrS(CH2)2SiPr}], does not deposit WS2 under similar conditions.
红褐色的[(WSCl 4)2 μ-RS(CH 2)2 SR}](R = Me,Ph,i Pr)和[(WSCl 4)2 μ-
MES(CH 2)3 SMe}通过在无
水CH 2 Cl 2溶液中使WSCl 4与
硫醚以2:1的摩尔比反应制备,并通过微分析,IR,UV / Vis和1 H NMR光谱表征。四个二
硫醚的复合物的X-射线结构揭示了正方棱锥WSCL 4个单元和桥接的二
硫醚为W小号反式,向
硫醚
硫。顺磁W(类似地,使用1:≥1的反应物比例或更长的反应时间制备了V)络合物[WSCl 3 RS(CH 2)2 SR}](R = Me,i Pr)。还描述了W(VI)配合物[WSCl 4(SMe 2)]和[WSCl 4(SeMe 2)]。WOCL的类似配合物4,[(WOCL 4)2 RS(CH 2)2 SR}](R = PH,我PR),已经进行了类似地从WOCL 4,但使用
MES(CH反应2)Ñ SME(ñ=