Gadolinium--germane (5/4) | 12064-73-2

• 英文名称: Gadolinium--germane (5/4)
• 英文别名: gadolinium;germane
• CAS: 12064-73-2
• 化学式: Gd₅Ge₄
• 分子量: 1076.61
• InChiKey: GHRACOLHLORBON-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -5.81
• 重原子数：
  9
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  锗烷 、 Gadolinium--germane (5/4) 、 硅烷 以 neat (no solvent) 为溶剂， 生成
  参考文献：
  名称：

  具有巨磁热效应的可调谐磁性蓄热合金，用于从 ~20 到 ~290 K 的磁制冷

  摘要：

  在 Gd5(SixGe1−x)4 伪二元合金中发现了巨磁热效应 (ΔSmag)，其中 x⩽0.5。对于~50 和~280 K 之间的温度范围，它超过了任何已知磁性制冷剂材料在相应居里温度下的可逆（相对于交变磁场）ΔSmag 2-10 倍。该合金体系最显着的两个特点是： (1) 导致 Gd5(SixGe1-x)4 中大 ΔSmag 的一级相变相对于交变磁场是可逆的，即巨磁热效应可用于有源磁蓄热式磁制冷机；(2) 通过调整 Si:Ge 比，在不损失巨磁熵变的情况下，排序温度可在 ~30 到 ~276 K 之间调节。

  DOI：

  10.1063/1.119206
• 作为产物：
  描述：

  氢化钆 、 锗烷 以 melt 为溶剂， 生成 Gadolinium--germane (5/4)
  参考文献：
  名称：

  体积压缩性控制的 Gd5(Si,Ge)4 纳米颗粒的晶胞体积减少

  摘要：

  摘要 通过脉冲激光沉积 (PLD) 生产降维的 Gd5(Si,Ge)4 化合物已显示出其实际应用的潜力。在这里，我们展示了使用 Nd:Yag（1064 nm）和准分子 KrF 激光器（248纳米）。同步加速器 X 射线衍射测量结果显示，与其体相比较，晶胞体积减小。x = 0 样品呈现约 1.99% 的减少，而 x = 0.45 的组成，晶胞体积的收缩约 1.81%，这是由于结构变化为 Gd5Si4 型结构 [O(I)] 的结果。相比之下，x = 0.60 的纳米粒子保留了体积收缩约 0.95% 的块状晶体结构。作为结果，对于所有纳米结构，磁跃迁顺序从第一个变为第二个，然后磁热响应降低。这些观察揭示了体积压缩率值与晶胞收缩率之间的直接相关性，表明表面应力的增加对颗粒和晶胞尺寸起着重要作用。

  DOI：

  10.1016/j.jallcom.2020.156384

文献信息

• Phase equilibria in the Gd-Ge-Sb system at 773 K and the magnetic properties of novel compound Gd8Ge13.29Sb1.72
  作者：Hongrui Liu、Changzhong Liao、Weijing Zeng、Tonghan Yang、Lingmin Zeng、Wei He

  DOI：10.1016/j.jallcom.2020.153841

  日期：2020.6

  Abstract The isothermal section of the phase diagram of the Gd-Ge-Sb ternary system at 773 K has been studied by X-ray powder diffraction (XRPD and S-PXRD), Rietveld method, scanning electron microscopy (SEM) equipped with energy dispersive (EDS), electron probe microanalysis (EPMA) and electron diffraction (ED). The existence of nine binary compounds, Gd5Ge3, Gd5Ge4, GdGe, Gd2Ge3, Gd3Ge5, Gd5Sb3,

  摘要 采用 X 射线粉末衍射（XRPD 和 S-PXRD）、Rietveld 法、配备能量色散的扫描电子显微镜 (SEM) 研究了 Gd-Ge-Sb 三元体系在 773 K 相图的等温截面。 (EDS)、电子探针微量分析 (EPMA) 和电子衍射 (ED)。存在九种二元化合物，Gd5Ge3、Gd5Ge4、GdGe、Gd2Ge3、Gd3Ge5、Gd5Sb3、Gd4Sb3、GdSb、Gd16Sb39和Mn5Si3型 -0Sb0-3（空间群P63/m3、h3P16-3、h3P16-3）确认了 Gd4Ge2-0Sb1-3 型（空间群 I-43d，No. 220，cI28）准二元固溶体和三元 Gd6Ge4.3Sb11.7 型 Gd6Ge4.3Sb11.7（空间群 Immm，No. 71，oI46），而在这项工作中发现了新的 GdGe1.69Bi0.21 型 Gd8Ge13.29Sb1.72（空间群
• Gasanova, Felix; Labarta, Amilcar; Bartlle, Xavier, Physical Review B: Condensed Matter and Materials Physics, p. 1 - 7
  作者：Gasanova, Felix、Labarta, Amilcar、Bartlle, Xavier、Marcos, Jordi、Mannosa, Lluis、et al.

  DOI：——

  日期：——
• Formation of completely miscible solid-solution Gd5(Si1−xGex)4 induced by ferromagnetic exchange interaction
  作者：Q.L Liu、G.H Rao、H.F Yang、J.K Liang

  DOI：10.1016/s0925-8388(01)01392-5

  日期：2001.7

  The crystal structure and magnetic properties of Gd-5(Si1-xGex)(4) compounds (0 less than or equal to x less than or equal to 1.0) are investigated by means of temperature dependent X-ray powder diffraction and magnetic measurements. A crystallographic and magnetic phase diagram of the pseudobinary system Gd5Si4-Gd5Ge4 is constructed. An intriguing observation is that Gd-5(Si1-xGex)(4) alloys form a completely miscible solid-solution at low temperature (< T-C), crystallizing in the Gd5Si4-type structure as indicated by the well-defined linear dependence of lattice parameters on germanium concentration x, and decomposing into three partially miscible solid-solutions above the Curie temperature, i.e. Gd5Si4 based (x < 0.5), Gd5Ge4 based (x greater than or equal to 0.8) and Gd5Si2Ge2 based (0.5 less than or equal to x < 0.8) solid-solutions, This unusual feature can be understood by taking into account competing effects of ferromagnetic exchange interaction and lattice strain in the solid-solution. (C) 2001 Elsevier Science B.V. All rights reserved.
• Phase Transformation Driven by Valence Electron Concentration:  Tuning Interslab Bond Distances in Gd₅Ga<i>_x</i>Ge₄_-<i>_x</i>
  作者：Yurij Mozharivskyj、Wonyoung Choe、Alexandra O. Pecharsky、Gordon J. Miller

  DOI：10.1021/ja037649z

  日期：2003.12.1

  X-ray single crystal and powder diffraction studies on the Gd5GaxGe4-x system with 0 less than or equal to x less than or equal to 2.2 reveal dependence of interslab T-T dimer distances and crystal structures themselves on valence electron concentration (T is a mixture of Ga and Ge atoms). While the Gd5GaxGe4-x phases with 0 less than or equal to x less than or equal to 0.6 and valence electron concentration of 30.4-31 e(-)/formula crystallize with the Sm5Ge4-type structure, in which all interslab T-T dimers are broken (distances exceeding 3.4 Angstrom), the phases with 1 less than or equal to x less than or equal to 2.2 and valence electron concentration of 28.8-30 e-/formula adopt the Pu5Rh4- or Gd5Si4-type structures with T-T dimers between the slabs. An orthorhombic Pu5Rh4-type structure, which is intermediate between the Gd5Si4- and Sm5Ge4-type structures, has been identified for the Gd5GaGe3 composition. Tight-binding linear-muffin-tin-orbital calculations show that substitution of three-valent Ga by four-valent Ge leads to larger population of the antibonding states within the dimers and, thus, to dimer stretching and eventually to dimer cleavage.
• Calorimetric determination of standard molar enthalpies of formation of gadolinium silicides and germanides
  作者：N.I Usenko、M.I Ivanov、V.V Berezutski、R.I Polotska

  DOI：10.1016/s0925-8388(97)00480-5

  日期：1998.2

  The standard molar enthalpies of formation of gadolinium silicides and germanides have been determined by solution drop calorimetry. The following values of Delta H-f(0) (kJ g(-1)-atom) are reported: GdSi1.89, -58.3 +/- 4.3; GdSi1.5, -69.4 +/- 5.1; GdSi, -88.7 +/- 4.3; Gd5Si4, -75.7 +/- 4.6; Gd5Si3, -73.5 +/- 4.5; GdGe1.63, -65.0 +/- 4.1; GdGe1.5, -70.7 +/- 4.1; GdGe, -79.6 +/- 3.5; Gd5Ge4, -79.5 +/- 3.1; Gd5Ge3, -83.1 +/- 3.4. Our results are in satisfactory agreement with other calorimetric data. (C) 1998 Elsevier Science: S.A.