Gallium--lanthanum (2/1) | 12160-69-9

• 英文名称: Gallium--lanthanum (2/1)
• 英文别名: gallane;lanthanum
• CAS: 12160-69-9
• 化学式: Ga₂La
• 分子量: 278.351
• InChiKey: KUJHRZLTTUSIPQ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -2.37
• 重原子数：
  3
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为产物：
  描述：

  lanthanum(III) chloride 、 氢化镓 在 cesium chloride 、 sodium chloride 作用下， 以 melt 为溶剂， 反应 5.0h， 生成 Gallium--lanthanum (2/1)
  参考文献：
  名称：

  熔融 NaCl-2CsCl 共晶中镧化合物在惰性 Mo 和液态 Ga 电极上的电化学行为和热力学性质研究

  摘要：

  为了从熔融的 NaCl-CsCl-LaCl 3溶液中提取金属镧，研究了 La(III) 离子在惰性 Mo 和液态 Ga 电极上的电化学还原。瞬态电化学技术已被用于探索还原机制、传输参数和热力学性质。所得结果表明惰性电极上 La(III) + 3ē → La 的电化学反应是单阶段不可逆过程，受电荷转移速率控制。同时，得到了[LaCl 6 ] 3-络离子在不同温度下的扩散系数。La 3+的表观标准电位/La 对和 La-Ga 合金与温度的关系被确定。计算了镧化合物的基本热力学性质。此外，电解恒电位法用于La-Ga合金的合成。

  DOI：

  10.1149/1945-7111/ac6246

文献信息

• Standard enthalpies of formation of some 5d transition metal gallides by high-temperature direct synthesis calorimetry
  作者：S.V Meschel、O.J Kleppa

  DOI：10.1016/s0925-8388(00)01113-0

  日期：2000.10

  Abstract The standard enthalpies of formation of some 5d transition metal gallides have been measured by high-temperature direct synthesis calorimetry at 1373±2 K. The following results (in kJ/mol of atoms) are reported: LaGa 2 (−69.2±2.4); HfGa 3 (−42.4±2.7); Hf 5 Ga 3 (−45.4±2.1); Ta 5 Ga 3 (−28.3±2.2); OsGa 3 (−27.4±1.6); IrGa 3 (−41.2±1.9); IrGa (−43.3±1.8); Pt 3 Ga (−41.3±2.2); PtGa (−57.3±2.3)

  摘要 通过高温直接合成量热法在 1373±2 K 下测量了一些 5d 过渡金属镓的标准生成焓。报告了以下结果（kJ/mol 原子）： LaGa 2 (-69.2±2.4) ; HfGa 3 (-42.4±2.7)；Hf 5 Ga 3 (-45.4±2.1)；Ta 5 Ga 3 (-28.3±2.2)；OsGa 3 (-27.4±1.6)；IrGa 3 (-41.2±1.9)；IrGa (-43.3±1.8); Pt 3 Ga (-41.3±2.2)；PtGa (-57.3±2.3)。将结果与一些通过溶液量热法获得的或从 EMF 测量得出的早期值进行比较。还将它们与 MiedEMa 和同事的预测值进行比较。我们将 3d、4d 和 5d 过渡金属镓化物的形成焓和 5d gallides 的形成热与 5d 过渡金属铝化物和锗化物的可用值进行比较。
• Standard enthalpies of formation of lanthanum gallides by high temperature reaction calorimetry
  作者：R. Babu、K. Nagarajan、V. Venugopal

  DOI：10.1016/s0925-8388(00)01459-6

  日期：2001.3

  The standard enthalpies of formation (Delta H-f(298.15)0) of La5Ga3, LaGa and LaGa2 at 298.15 were determined by high temperature liquid gallium solution calorimetry to be -62.6+/-4.5, -74.8+/-3.7 and -69.0+/-3.7 kJ gatom(-1) respectively. The enthalpy of formation of LaxGa1-x where. x=0.19 at 1125 K was determined by using precipitation calorimetry, to be -37.5+/-3.7 kJ gatom(-1). The partial enthalpy of solution of lanthanum in liquid gallium at infinite dilution (Delta(H) over bar (infinity)(La)) at 1099 K was determined to be -167.9+/-6.8 kJ gatom(-1). (C) 2001 Elsevier Science B.V. All rights reserved.
• Superconductivity in LaGa_<b>2</b>
  作者：Yutaka Fujimaki、Kazuhiko Satoh、Yoshichika Ōnuki

  DOI：10.1143/jpsj.61.395

  日期：1992.1.15
• Ordered LaGa4 and its relation to other structures in the GaLa binary system
  作者：Wayne D. Kaplan、Giora Kimmel

  DOI：10.1016/0925-8388(95)01887-5

  日期：1996.1

  The orthorhombic LaGa4 (epsilon') ordered structure has been refined using Rietveld analysis and X-ray powder diffraction. The structure is oP20 with a Pmmm symmetry, and can be readily related to the disordered hexagonal AlB2-type (hP3) structure (La1-xGa2+2x, 0 less than or equal to x less than or equal to 1/3) via pairs of gallium atoms, whose orientation in the lattice determines the order of the structure. The ordering mechanism is unique, owing to its definition by the orientation of pairs of gallium atoms. An incremental ordering model has been developed to simulate possible super structures, and to refine the LaGa4 structure through Rietveld analysis. The crystallographic details of LaGa4 and its formation relative to other structures in the gallium-rich gallium-lanthanum binary system are discussed.