| 81775-28-2

• CAS: 81775-28-2
• 化学式: LaPtSi
• 分子量: 362.071
• InChiKey: FSHHLSFRCFBRFA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -1.45
• 重原子数：
  3.0
• 可旋转键数：
  0.0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0.0
• 氢给体数：
  0.0
• 氢受体数：
  0.0

反应信息

• 作为产物：
  描述：

  三氢化镧 、 铂 、 硅烷 以 neat (no solvent) 为溶剂， 生成
  参考文献：
  名称：

  Ni掺杂LaPtSi的超导性

  摘要：

  摘要 通过交流磁化率测量确定了一系列十个替代金属间化合物样品 La(Pt 1-x Ni x )Si (0≤x≤1) 的超导临界温度 T c 。发现超导临界温度Tc随着Ni浓度从3.30K单调降低到1.23K。此外，晶格参数的变化遵循 Vergard 定律。

  DOI：

  10.1016/0038-1098(95)00115-8

文献信息

• Supraconductivity of LaPtSi and LaPtGe
  作者：J. Evers、G. Oehlinger、A. Weiss、C. Probst

  DOI：10.1016/0038-1098(84)90060-7

  日期：1984.4

  Abstract In the ternary compounds LaPtSi and LaPtGe with the LaPtSi-type structure we have observed supraconductivity with a sharp transition temperature of T c =3.3 K and T c =3.4 K, respectively. The superconducting properties of these ternary compounds are compared with binary ones which crystallize in the α-ThSi 2 -type structure, since the LaPtSi-type structure is a derivative structure of this

  摘要 在具有 LaPtSi 型结构的三元化合物 LaPtSi 和 LaPtGe 中，我们观察到超导电性，其转变温度分别为 T c =3.3 K 和 T c =3.4 K。将这些三元化合物的超导性质与在 α-ThSi 2 型结构中结晶的二元化合物进行比较，因为 LaPtSi 型结构是其衍生结构。
• Magnetism and superconductivity in<i>R</i>PtSi (<i>R</i>=La, Ce, Nd, and Sm)
  作者：S. Ramakrishnan、K. Ghosh、Arvind D. Chinchure、V. R. Marathe、Girish Chandra

  DOI：10.1103/physrevb.52.6784

  日期：——

  Although many studies have been made on the nonmagnetic heavy fermion CePtSi belonging to the alpha-ThSi2 structure, to the best of our knowledge no studies have been reported in the other rare-earth members of this series. In this paper, we report our resistivity, magnetization, and heat capacity studies on NdPtSi and SmPtSi. We have established bulk antiferromagnetic ordering in NdPtSi below 3.8 K and ferromagnetic ordering in SmPtSi below 15 K. The heat-capacity studies show large contribution from the crystal-field effects. We have also established bulk superconductivity below 3.8 K in LaPtSi from resistivity, susceptibility, and heat capacity studies. A detailed study of the influence of paramagnetic impurities (Nd and Ce) on the superconductivity of LaPtSi has been made. From this study, we are able to show that the superconducting transition temperature (T-c) decreases with the substitution of Nd impurities and this can be explained using Abrikosov and Gor'kov theory. On the other hand, Ce impurities show large depression of T-c which we ascribe to the Kondo effect due to Ce atoms with the Kondo temperature, T-k approximate to 0.25 T-c. The observed data have been analyzed using recent quantum Monte Carlo calculations by Jarrel for superconductors with arbitary T-k values.
• Vacancy effects on T in superconducting LaPt1−Si (0 ⩽x⩽ 0.2)
  作者：W.H. Lee、H.H. Sung、K.J. Syu、J.Y. Chen

  DOI：10.1016/j.physc.2009.11.101

  日期：2010.12

  As revealed in the powder X-ray diffraction and crystallographic data, the parent compound LaPtSi, which crystallizes in the LaPtSi-type structure (14(1)md), admits considerable vacancies up to 20% on the Pt sublattice while still retaining its tetragonal symmetry. The refined lattice parameters show that both the a-axis and the volume of the unit cell v contract clearly, though the c-axis exhibits less percentage change due to the existence of vacancies in the compound. These results are consonant with what one would expect from a chemical pressure effect. Magnetic and heat-capacity measurements demonstrate that the change in T-c, with x is similar to the change in the reduced lattice parameters a and v. It is found that the T-c change rate dT(c)/dx = -9.6 +/- 0.6 K and dT(c)/dv = 1.5 +/- 0.3 K/angstrom(3). (C) 2009 Elsevier B.V. All rights reserved.