| 897050-08-7

• CAS: 897050-08-7
• 化学式: C₆H₁₇GaN₄
• 分子量: 214.951
• InChiKey: GVUGYTKFADHVSR-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  None
• 重原子数：
  None
• 可旋转键数：
  None
• 环数：
  None
• sp3杂化的碳原子比例：
  None
• 拓扑面积：
  None
• 氢给体数：
  None
• 氢受体数：
  None

反应信息

• 作为反应物：
  描述：

  锰 、 以 neat (no solvent) 为溶剂， 生成
  参考文献：
  名称：

  The magnetic properties of Be-codoped GaMnN grown via molecular beam epitaxy

  摘要：

  GaMnN and Be-codoped GaMnN were grown via molecular beam epitaxy using a single GaN precursor and their structural and magnetic properties were examined. X-ray diffraction and superconducting quantum interference device (SQUID) measurements revealed that the grown layers are homogeneous without precipitates. The saturation magnetization of GaMnN has increased from similar to 4 to similar to 16 emu/cm(3) via codoping of Be. The d-d exchange interaction between Mn atoms was discussed for the ferromagnetism of GaMnN. (C) 2006 Elsevier B. V. All rights reserved.

  DOI：

  10.1016/j.jmmm.2006.02.040