xenon oxide | 14899-66-2

• 英文名称: xenon oxide
• CAS: 14899-66-2
• 化学式: OXe
• 分子量: 147.289
• InChiKey: GWRMSMKXOUQTFF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.12
• 重原子数：
  2.0
• 可旋转键数：
  0.0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  19.9
• 氢给体数：
  0.0
• 氢受体数：
  0.0

反应信息

• 作为产物：
  描述：

  氙气 、 氧气 以 neat (no solvent) 为溶剂， 生成 xenon oxide
  参考文献：
  名称：

  13-30 微米直径微放电装置：高于大气压下的原子离子和分子发射

  摘要：

  圆柱形微放电装置的腔直径小至 13 μm，体积小至几纳升，已在带有和不带有屏幕电极的金属/聚合物结构中制造。这些装置在 Ne、Xe、空气、Xe/O2 和 Ne/空气混合物中产生稳定的辉光放电，总压力高达所研究的最大值 1200 Torr。30 μm 直径器件中的氖放电对于高于 700 Torr (pd>2.1 Torr cm) 的 pNe 表现良好，并在高于大气压的单电荷 Ne 离子跃迁中产生强烈的 UV 发射。在 650-1100 Torr 范围内的 Xe 也观察到来自 Xe+ 和 Xe2+ 的可见荧光以及似乎归因于中性二聚体的绿色（~530 nm）和蓝色（~484 nm）中的分子特征。空气 (100–740 Torr) 和 Ne/空气混合物中的放电会在近紫外线和紫色中产生强烈的 N2(C→B) 和 N2+(B→X) 发射。在 30 μm 器件中观察到的最低 Ne 放电工作电压为 87 V

  DOI：

  10.1063/1.1520707

文献信息

• XeF₂ photodissociation studies. I. Quantum yields and kinetics of XeF(<i>B</i>) and XeF(<i>C</i>)
  作者：G. Black、R. L. Sharpless、D. C. Lorents、D. L. Huestis、R. A. Gutcheck、T. D. Bonifield、D. A. Helms、G. K. Walters

  DOI：10.1063/1.441920

  日期：1981.11.15

  Photodissociation of XeF2 with synchrotron light pulses (0.3 ns duration) has been used as the source of the XeF(B, C, and D) excited states. The time-resolved profiles of the intensity of the resulting fluorescence have been recorded and partially analyzed. Most of the measurements were made in the strong XeF2 absorption band between 145 and 175 nm. The absorption cross section was redetermined out to 210 nm, with a maximum value of (5.9±0.5)×10−17 cm2 at 158 nm. By comparison with O(1S) signals from N2O photodissociation, quantum yields for XeF B, C, and D state production were determined. Radiative lifetimes of (14±1) and (100±10) ns were found for the B and C states. Rate coefficients for quenching by XeF2 are reported as are those for converting B to C by collision with Ne, Ar, and N2, along with upper limits for quenching of the C state by these gases.
• Two‐photon induced exciton mediated dissociation of N₂O and photomobility of O atoms in crystalline Xe
  作者：W. G. Lawrence、V. A. Apkarian

  DOI：10.1063/1.463728

  日期：1992.11

  Two-photon induced access of Xe excitons at 248 nm leads to efficient dissociation of N2O impurities via ionic potentials. The product O atoms are probed via the Xe+O− charge transfer transitions, and the N2O disappearance is probed by infrared (IR) spectroscopy. Charge transfer excitation of O atoms leads to atomic mobility, such that with extensive irradiation a photochemical steady-state is reached between N2O, oxygen atoms trapped in the Xe bulk, and within the same cage as N2. A detailed kinetic analysis of these processes is presented. Among the extracted parameters are the two-photon absorption cross section of Xe at 248 nm, 3.7×10−48 cm4 s, the free exciton migration length, 47 Å, and the excitonic dissociation probability of N2O, 0.85. The mobility of photoexcited O atoms is attributed to the topology of electronically excited surfaces which show minima at the ground state cage barriers.