2-(4'-vinylbiphenyl-4-yl)-5-phenyl-1,3,4-oxadiazole | 136180-42-2

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 2-(4'-vinylbiphenyl-4-yl)-5-phenyl-1,3,4-oxadiazole
• 英文别名: 2-[4-(4-Ethenylphenyl)phenyl]-5-phenyl-1,3,4-oxadiazole
• CAS: 136180-42-2
• 化学式: C₂₂H₁₆N₂O
• 分子量: 324.382
• InChiKey: XRPLTFIOITZYKS-UHFFFAOYSA-N

物化性质

• 沸点：
  510.1±53.0 °C(Predicted)
• 密度：
  1.156±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  5.5
• 重原子数：
  25
• 可旋转键数：
  4
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  38.9
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  2-(4'-(1-hydroxyethyl)biphenyl-4-yl)-5-phenyl-1,3,4-oxadiazole 在 四磷十氧化物 作用下， 以 苯 为溶剂， 反应 40.0h， 以42%的产率得到2-(4'-vinylbiphenyl-4-yl)-5-phenyl-1,3,4-oxadiazole
  参考文献：
  名称：

  Kurfuerst, Antonin; Lhotak, Pavel; Nadenik, Petr, Collection of Czechoslovak Chemical Communications, 1991, vol. 56, # 7, p. 1495 - 1504

  摘要：

  DOI：

文献信息

• New random copolymers with pendant carbazole donor and 1,3,4-oxadiazole acceptor for high performance memory device applications
  作者：Yi-Kai Fang、Cheng-Liang Liu、Wen-Chang Chen

  DOI：10.1039/c0jm02535f

  日期：——

  New non-conjugated random copolymers containing pendent electron-donating 9-(4-vinylphenyl)carbazole (VPK) and electron-accepting 2-phenyl-5-(4-vinylphenyl)-1,3,4-oxadiazole (OXD) or 2-(4-vinylbiphenyl)-5-(4-phenyl)-1,3,4-oxadiazole (BOXD) were successfully synthesized by nitroxide-mediated free radical polymerization (NMRP) method. The prepared random copolymers are denoted as P(VPKxOXDy) or P(VPKxBOXDy) with three different electron donor/acceptor (x/y) ratios of 8/2, 5/5, and 2/8. The electrical switching behavior based on the ITO/polymer/Al device configuration could be tuned through the donor/acceptor ratio or acceptor trapping ability. Both experimental and theoretical results indicated that the charge transfer between the pendant donor and acceptor was relatively weak without significant orbital hybridization. In addition, the low-lying HOMO energy level of OXD or BOXD units as compared to VPK units created the trapping environment. Therefore, distinct electrical current–voltage (I–V) characteristics changed between the diode, the volatile memory, and the insulator depending on the relative donor/acceptor ratios of 10/0, 8/2, and (5/5, 2/8 and 0/10), respectively. The memory device based on P(VPK8OXD2) or P(VPK8BOXD2) copolymers exhibited volatile static random access memory (SRAM) behavior with an ON/OFF current ratio of approximately 104–105, up to 107 read pulses, and retention time of more than 1 h. The unstable ON state in the device was due to the shallow trapped holes with spontaneously back transferring of charge carriers when the electric field was removed and thus exhibited a volatile nature. The slightly lower HOMO level of OXD moieties than that of BOXD led to the P(VPK8OXD2) device storing the charge for a longer period of time. The present study suggested the high performance polymer memory devices could be achieved by changing the donor/acceptor ratio or chemical structure.

  新型非共轭随机共聚合物成功合成，含有带有电子供体功能的9-(4-乙烯基苯基)喹唑啉（VPK）和电子受体功能的2-苯基-5-(4-乙烯基苯基)-1,3,4-噁二唑（OXD）或2-(4-乙烯基联苯)-5-(4-苯基)-1,3,4-噁二唑（BOXD），采用了自旋标记的自由基聚合（NMRP）方法。所制备的随机共聚合物命名为P(VPKxOXDy)或P(VPKxBOXDy)，并具有三种不同的电子供体/受体（x/y）比例：8/2、5/5和2/8。基于ITO/聚合物/铝器件配置的电流开关行为可以通过供体/受体比例或受体捕获能力进行调节。实验和理论结果均表明，悬挂供体与受体之间的电荷转移相对较弱，没有显著的轨道杂化。此外，OXD或BOXD单元的低位HOMO能级相较于VPK单元创造了捕获环境。因此，二极管、挥发性存储器和绝缘体之间的电流-电压（I-V）特性因供体/受体相对比例如10/0、8/2和(5/5, 2/8及0/10)而有所不同。基于P(VPK8OXD2)或P(VPK8BOXD2)共聚合物的存储器器件表现出挥发性静态随机存取存储器（SRAM）行为，ON/OFF电流比约为10^4-10^5，读出脉冲可达10^7，保持时间超过1小时。器件中的不稳定ON状态是由于在移除电场时，浅层捕获的电洞自发地回转移电荷载流子，从而表现出挥发性。OXD单元的HOMO水平略低于BOXD，这导致P(VPK8OXD2)器件能够存储电荷更长时间。本研究表明，通过改变供体/受体比例或化学结构，可以实现高性能聚合物存储器件。
• QUANTUM DOT-CONTAINING MATERIAL, METHOD FOR PREPARING THE QUANTUM DOT-CONTAINING MATERIAL, COMPOSITION CONTAINING THE QUANTUM DOT-CONTAINING MATERIAL, AND LIGHT-EMITTING DEVICE INCLUDING THE QUANTUM DOT-CONTAINING MATERIAL
  申请人：Samsung Display Co., Ltd.

  公开号：US20220169920A1

  公开（公告）日：2022-06-02

  Disclosed are a quantum dot-containing material, a method of preparing the quantum dot-containing material, a composition including the quantum dot-containing material, and a light-emitting device including the quantum dot-containing material.
• Kurfuerst, Antonin; Lhotak, Pavel; Nadenik, Petr, Collection of Czechoslovak Chemical Communications, 1991, vol. 56, # 7, p. 1495 - 1504
  作者：Kurfuerst, Antonin、Lhotak, Pavel、Nadenik, Petr、Raclova-Pavlikova, Frantiska、Kuthan, Josef

  DOI：——

  日期：——