Thin films of iron cobalt oxides with spinel-type structure are made by the atomic layer deposition (ALD) technique using Fe(thd)3 (Hthd = 2,2,6,6-tetramethylheptane-3,5-dione), Co(thd)2, and ozone as precursors. Pulse parameters for ALD-type growth are established and such growth can be achieved at deposition temperatures between 185 and 310 °C. Films have been deposited on amorphous soda-lime glass and single-crystalline substrates of Si(100), MgO(100), and α-Al2O3(001) which all provide crystalline films, but with various orientations and crystallite sizes. Application of an external magnetic field during the film growth does not influence film growth characteristics (growth rate, crystallinity, topography etc.). Magnetization data are reported for phase-pure films of spinel-type structure with composition Fe2CoO4.
采用原子层沉积(ALD)技术,通过使用前驱体Fe(thd)3(Hthd = 2,2,6,6-四甲基庚烯-3,5-二酮)、Co(thd)2和
臭氧,制备了具有尖晶石结构的
铁钴氧化物薄膜。建立了ALD型生长的脉冲参数,这种生长可以在185至310°C的沉积温度下实现。薄膜沉积在非晶
钠钙玻璃和单晶基底上,如Si(100)、MgO(100)和α-
Al2O3(001),这些基底均提供了结晶薄膜,但具有不同的取向和晶粒大小。在薄膜生长过程中施加外部磁场对薄膜生长特性(生长速率、结晶性、表面形貌等)没有影响。对于组成Fe2CoO4的相纯薄膜,报告了其磁化数据。