作者:Jingjing Shi、Imran Murtaza、Shan Shao、Xiaosi Zhu、Yang Zhao、Mengmeng Zhu、Osamu Goto、Hong Meng
DOI:10.1007/s11426-016-0303-0
日期:2017.1
poly(thiophene) (E g=2.2 eV) and poly(2,5-bis(2,3-dihydrothieno[3,4-b][1,4]dioxin-5-yl)thiophene) (E g=1.7 eV), P(t-EDOT-Th) (E g=1.62 eV) has the lowest band gap. Hence, we speculate that the band gaps of the two polymers, having 3D structures, are decreased in contrast to non-substituted polymers or bi-EDOT substituted polymers, thiophene and 1-methyl-1H-pyrrole. The results indicated that P(t-EDOT-Th) thin
几种新型电致变色材料聚(2,3,4,5-四(2,3-氢噻吩并[3,4- b ]二辛-5-基)-1-甲基-1 H-吡咯)(P(t -EDOT-mPy))和poly(5,5',5',5''-(噻吩-2,3,4,5-四基)四(2,3-二氢噻吩并[3,4- b ]分别通过它们的四-EDOT取代的单体t -EDOT-mPy和t -EDOT-Th的多位聚合来电沉积[1,4]二恶英)(P(t -EDOT-Th))。与线性二维结构化聚噻吩(E g = 2.2 eV)和聚(2,5-双(2,3-二氢噻吩并[3,4- b ] [1,4]二恶英-5-基)噻吩)(é克 =(1.7 eV),P(t -EDOT-Th)(E g = 1.62 eV)具有最低的带隙。因此,我们推测与非取代聚合物或双-EDOT取代聚合物,噻吩和1-甲基-1 H-吡咯相比,具有3D结构的两种聚合物的带隙减小。结果表明,P(t -EDOT-Th