perpendicularly to each other. The W–Si bond distances of 5 are comparable to those of typical base-stabilized tungsten silylene complexes. The C–C bond distance is much longer than a typical C≡C triple-bond distance and is similar to a typical C═C double-bond distance. The bonding nature and electronic structure of 5 were disclosed by a DFT study of the model complex Cp(CO)2W(SiH2)(μ-CC)(SiH2)W(CO)2Cp
的Ph反应2 HSiC≡CSiHPh 2与2当量的不稳定配合物的Cp *的(CO)2(M(NCMe)我1a中;中,M═w ^ 2中,M═沫;的Cp *═η 5 -C 5我5)给出了新颖的CC桥联双核络合物Cp *(CO)2 M(SiPh 2)(μ-CC)(SiPh 2)M(CO)2 Cp *(5,M═W ; 6,M═Mo),通过X射线晶体学确定分子结构。CC桥与两个Cp *(CO)2 M(SiPh 2)碎片形成两个M–Si–C三元环骨架,它们几乎彼此垂直连接。W-Si的键距为5,可与典型的碱稳定的
钨甲
硅烷基络合物的键距相媲美。C–C键距比典型的C≡C三键距长得多,并且与典型的C═C双键距相似。接合性质和电子结构5是由模型复杂的Cp(CO)的DFT研究公开2 W(的SiH 2)(μ-CC)
硅烷(SiH 2)W(CO)2的Cp(5M的Cp═η; 5 -C 5 H 5)。这项研究表明5M是
乙炔基